Transparent semiconducting oxides: materials and devices

Grundmann, Marius; Frenzel, Heiko; Lajn, Alexander; Lorenz, Michael; Schein, Friedrich-Leonhard; Wenckstern, Holger von

doi:10.1002/pssa.200983771

Cited by 134 publications

(86 citation statements)

References 117 publications

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“…Transparent conductive oxides (TCOs) are very promising materials for opto-electronics, due to their wide band gap [1], transparency to visible light, and good n-type conductivity [2,3]. Recent advances in the synthesis of group-III sesquioxides single crystals [4][5][6][7] have drawn particular attention to these compounds.…”

Section: Introductionmentioning

confidence: 99%

Atomic signatures of local environment from core-level spectroscopy inβ−Ga2O3

et al. 2016

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We present a joint theoretical and experimental study on core-level excitations from the oxygen K-edge of β-Ga 2 O 3 . A detailed analysis of the electronic structure reveals the importance of O-Ga hybridization effects in the conduction region. The spectrum from O 1s core electrons is dominated by excitonic effects, which overall red-shift the absorption onset by 0.5 eV, and significantly redistribute the intensity to lower energies. Analysis of the spectra obtained within many-body perturbation theory reveals atomic fingerprints of the inequivalent O atoms. From the comparison of energy-loss near-edge fine-structure (ELNES) spectra computed with respect to different crystal planes, with measurements recorded under the corresponding diffraction conditions, we show how the spectral contributions of specific O atoms can be enhanced while quenching others. These results suggest ELNES, combined with ab initio many-body theory, as a very powerful technique to characterize complex systems, with sensitivity to individual atomic species and to their local environment.

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Section: Introductionmentioning

confidence: 99%

Atomic signatures of local environment from core-level spectroscopy inβ−Ga2O3

et al. 2016

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“…In recent years, oxide materials have attracted much interest, and they are applied to various fields in terms of oxide electronics such as oxide superconductor electronics, optoelectronics, photocatalysis, biophotonics, and biomimetics [14][15][16][17][18]. The surface modification technique based on oxygen cluster ion beams has a high potential for the surface oxidation of various materials with low irradiation damage.…”

Section: Introductionmentioning

confidence: 99%

Mesenchymal Stem Cell Adhesion on Metal and Polymeric Surfaces Modified by Oxygen Cluster Ion Irradiation

Takaoka

Tsujinaka

Takeuchi

et al. 2014

Trans. Mat. Res. Soc. Japan

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Polyethylene (PE) and Ti surfaces were irradiated with oxygen cluster ions. For PE surfaces, the sputtered depth increased with an increase in acceleration voltage, and the sputtering yield was approximately 243 molecules per ion at an acceleration voltage of 9 kV. Atomic force microscopy showed that surface roughness increased with an increase in acceleration voltage. The contact angle was between 70° and 80°, which was smaller than that for the unirradiated surface. Adhesion of mesenchymal stem cells (MSCs) could be obtained by adjusting acceleration voltage, although cell adhesion was not observed on the unirradiated surfaces. For Ti surfaces, the surface roughness did not change with cluster ion irradiation. However, the contact angle decreased with an increase in acceleration voltage, and it was 46° at an acceleration voltage of 9 kV. Furthermore, after ultraviolet light irradiation for 30 min, the contact angle decreased to 28°. With regard to cell adhesion, the number of MSCs attached to the Ti surface increased after oxygen cluster ion irradiation.

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“…Furthermore, ZnO possesses advantages over other semiconductors in terms of low cost, ease of growth, and wet chemical processing, as well as biocompatibility. The rapid development of ZnO electronic device applications [1][2][3] has increased the need to understand and control its contact and doping properties. Here we review key challenges to ZnO Schottky barrier formation and a) Author to whom correspondence should be addressed; electronic mail:…”

Section: Introductionmentioning

confidence: 99%

Interplay of native point defects with ZnO Schottky barriers and doping

Brillson¹,

Dong²,

Tuomisto³

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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A combination of depth-resolved electronic and structural techniques reveals that native point defects can play a major role in ZnO Schottky barrier formation and charged carrier doping. Previous work ignored these lattice defects at metal-ZnO interfaces due to relatively low point defect densities in the bulk. At higher densities, however, they may account for the wide range of Schottky barrier results in the literature. Similarly, efforts to control doping type and density usually treat native defects as passive, compensating donors or acceptors. Recent advances provide a deeper understanding of the interplay between native point defects and electronic properties at ZnO surfaces, interfaces, and epitaxial films. Key to ZnO Schottky barrier formation is a massive redistribution of native point defects near its surfaces and interfaces. It is now possible to measure the energies, densities, and in many cases the type of point defects below the semiconductor-free surface and its metal interface with nanoscale precision. Depth-resolved cathodoluminescence spectroscopy of deep level emissions calibrated with electrical techniques show that native point defects can (1) increase by orders of magnitude in densities within tens of nanometers of the semiconductor surface, (2) alter free carrier concentrations and band profiles within the surface space charge region, (3) dominate Schottky barrier formation for metal contacts to ZnO, and (4) play an active role in semiconductor doping. The authors address these issues by clearly identifying transition energies of leading native point defects and defect complexes in ZnO and the effects of different annealing methods on their spatial distributions on a nanoscale. These results reveal the interplay between ZnO electronic defects, dopants, polarity, and surface nanostructure, highlighting new ways to control ZnO Schottky barriers and doping.

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Transparent semiconducting oxides: materials and devices

Cited by 134 publications

References 117 publications

Atomic signatures of local environment from core-level spectroscopy inβ−Ga2O3

Atomic signatures of local environment from core-level spectroscopy inβ−Ga2O3

Mesenchymal Stem Cell Adhesion on Metal and Polymeric Surfaces Modified by Oxygen Cluster Ion Irradiation

Interplay of native point defects with ZnO Schottky barriers and doping

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