Planar buried crescent InP/InGaAsP/InP heterostructure on p-InP

Васильев, М. Г.; Васильев, А. М.; Shelyakin, A. A.

doi:10.1134/s002016850809001x

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Cited by 10 publications

(2 citation statements)

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“…The MQW laser emitter offers a substantially lower temperature sensitivity of power-current behavior (which lends support to earlier results [6] and might alleviate design and temperature control requirements in OFCS applications).…”

Section: Discussionsupporting

confidence: 78%

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High-temperature buried InP/GaInAsP heterostructure laser diode emitting at 1310 nm

Васильев

Изотов

et al. 2014

Inorg Mater

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As a continuation of our studies aimed at creating semiconductor lasers based on buried InP/GaInAsP heterostructures, we consider the design and fabrication aspects of 1310 nm laser diodes for operation at elevated temperatures. We report the key features of the fabrication process and parameters of the laser emitters at temperatures of up to 120°C, and present their power-current and spectral characteris tics.

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Section: Discussionsupporting

confidence: 78%

“…Its main results were reported previously [4][5][6][7][8]. Below, we present new results regarding the operation of the pro posed laser emitters at the limiting elevated tempera ture.…”

Section: Introductionsupporting

confidence: 51%