Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective

Subramanian, Vaidyanathan; Parvais, B.; Borremans, Jonathan; Mercha, A.; Linten, Dimitri; Wambacq, Piet; Loo, Josine; Dehan, M.; Gustin, C.; Collaert, N.; Kubicek, Stefan; Lander, R.J.P.; Hooker, J.C.; Cubaynes, F.N.; Donnay, S.; Jurczak, M.; Groeseneken, G.; Sansen, Willy; Decoutere, Stefaan

doi:10.1109/ted.2006.885649

Cited by 142 publications

(54 citation statements)

References 10 publications

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“…[23] V A is composed by three main mechanisms: channel length modulation (CLM), drain induced barrier lowering (DIBL) and substrate current induced body effect (SCBE). Thus, the total V A can be written as…”

Section: Drain Output Conductance In Strained Narrow Finfetsmentioning

confidence: 99%

Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs

Pavanello

Martino

Simoen

et al. 2008

Solid-State Electronics

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Section: Drain Output Conductance In Strained Narrow Finfetsmentioning

confidence: 99%

Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs

Pavanello

Martino

Simoen

et al. 2008

Solid-State Electronics

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“…The TGFET showed a higher I d than the planar FET across the entire V g region whereas the off current was almost invariant, which is the crucial merit of the TGFET over the planar FET. This improvement is mainly attributed to the improved electrostatic control of the channel from the three-dimensional surrounding gate electrodes, as the other three-dimensional structure transistor has also demonstrated [14]. The transconductance (g m ) plots in Fig.…”

Section: Device Characteristicsmentioning

confidence: 86%

Fabrication of a nano-scaled tri-gate field effect transistor using the step-down patterning and dummy gate processes

Lee

Kim

Lee

et al. 2017

Microelectronic Engineering

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“…Among analog modules, the performance of a Miller op-amp and a band-gap reference using FinFET has already been reported [9]. Most of the analog building blocks are used in wireless communication systems and hence require a low power technology that enables analog/RF and digital blocks on the same chip [10], [11].…”

Section: Introductionmentioning

confidence: 99%

A Novel and Robust Approach for Common Mode Feedback Using IDDG FinFET

Shrivastava

Baghini

Sachid

et al. 2008

IEEE Trans. Electron Devices

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Abstract-In this paper, we propose a novel and robust approach for common mode feedback (CMFB) for a differential amplifier using independently driven double gate (IDDG) FinFET technology. The performance of a differential amplifier with and without the proposed CMFB scheme is compared using 2-D mixed mode device and circuit simulations. It is shown from extensive simulation results that it is possible to achieve a common mode rejection ratio of 90 dB with improved performance in terms of area, power, and bandwidth even in the presence of process variations. Stability analysis shows that the proposed CMFB scheme does not need any compensating network. The idea is validated using extensive mixed-mode circuit simulations on IDDG FinFET circuits in sub-45-nm node technologies.Index Terms-Common mode feedback (CMFB), FinFET, independently driven double gate (IDDG), mixed signal.

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Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective

Cited by 142 publications

References 10 publications

Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs

Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs

Fabrication of a nano-scaled tri-gate field effect transistor using the step-down patterning and dummy gate processes

A Novel and Robust Approach for Common Mode Feedback Using IDDG FinFET

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