A Novel and Robust Approach for Common Mode Feedback Using IDDG FinFET

Shrivastava, Mayank; Baghini, Maryam Shojaei; Sachid, Angada B.; Sharma, Dinesh K.; Rao, V. Ramgopal

doi:10.1109/ted.2008.2004475

Cited by 40 publications

(13 citation statements)

References 26 publications

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“…Multigate FinFET devices have shown excellent scalability and improved logic performance, as well as improved analog and mixed-signal circuit performance in sub-32-nm-node CMOS technologies [3]- [5] compared with planar bulk CMOS transistors. Body-tied or bulk FinFET structures have also received significant interest from various groups [6], [7].…”

Section: Introductionmentioning

confidence: 99%

A Novel Bottom Spacer FinFET Structure for Improved Short-Channel, Power-Delay, and Thermal Performance

Shrivastava

Baghini

Sharma

et al. 2010

IEEE Trans. Electron Devices

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Abstract-For the first time, we propose a novel bottom spacer fin-shaped field-effect-transistor (FinFET) structure for logic applications suitable for system-on-chip (SoC) requirements. The proposed device achieved improved short-channel, powerdelay, and self-heating performance compared with standard silicon-on-insulator FinFETs. Process aspects of the proposed device are also discussed in this paper. Physical insight into the improvement toward the short-channel performance and power dissipation is given through a detailed 3-D device/mixed-mode simulation. The self-heating behavior of the proposed device is compared with standard FinFETs by using detailed electrothermal simulations. The proposed device requires an extra process step but enables smaller electrical width for self-loaded circuits and is an excellent option for SoC applications.Index Terms-Bulk fin-shaped field-effect transistor (FinFET), electrothermal, fin-shaped field-effect transistor (FinFET), selfheating, short-channel performance, spacer, width quantization.

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Section: Introductionmentioning

confidence: 99%

A Novel Bottom Spacer FinFET Structure for Improved Short-Channel, Power-Delay, and Thermal Performance

Shrivastava

Baghini

Sharma

et al. 2010

IEEE Trans. Electron Devices

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“…They may be the unique option likely to overcome short channel effects and to provide the possibility of still downscaling CMOS devices into nanometre regime. Multi-gate structures can be of two types, namely simultaneously driven DG (SDDG) and independently driven DG (IDDG) [1]. As the name suggest, simultaneously driven double gate FinFET is a double gated device where the gates are simultaneously driven.…”

Section: Introductionmentioning

confidence: 99%

TCAD Simulation of Digital Logic Gates in Independent Double Gate Transistors – A Comparative Study between Conventional and Junctionless FETs

Harsha¹,

Nagarajan²,

Srinivasan³

2012

IJAPM

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Abstract-In this work, conventional independent double gate structure and Junctionless independent double gate structure-based inverters and NAND gates are studied and compared using TCAD simulation. The Junctionless devicebased circuits show a larger delay with smaller dynamic power whereas the conventional device-based circuits show smaller delay with larger dynamic power which is a simple power-delay trade-off.-Junctionless FET, FinFET, NAND, inverter, TCAD.I.

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“…A double gate structure can efficiently sandwich the semiconductor element playing the role of the transistor channel [13]. Recently, double gate structures with independent gate devices have offered additional advantages and challenges [2,6,[14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Transport and Electronic Properties of Two Dimensional Electron Gas in Delta-Migfet in Gaas

Oubram¹,

Gaggero‐Sager²,

Bassam³

et al. 2010

PIER

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Abstract-The objective of this work is to analyze electronic transport phenomena, due to ionized impurity scattering in δ-MIGFET (Delta-Multiple Independent Gate Field Effect Transistor). In this work, we report theoretical results for electronic transport in a delta-MIGFET using the device electronic structure and analytical expression of mobility and conductivity. The results show that the analytical mobility and conductivity are a good way to analyze transport in this device. We find the relative mobility as a linear and increasing function in different modes; also, we find transconductance as an almost flat function in all the evaluated interval. Finally, we analyze the differential capacitance and resistivity, and we report regions where this device is operating in digital and analogue mode. These regions are delimited in terms of intrinsic and extrinsic parameters of this device in symmetrical mode.

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A Novel and Robust Approach for Common Mode Feedback Using IDDG FinFET

Cited by 40 publications

References 26 publications

A Novel Bottom Spacer FinFET Structure for Improved Short-Channel, Power-Delay, and Thermal Performance

A Novel Bottom Spacer FinFET Structure for Improved Short-Channel, Power-Delay, and Thermal Performance

TCAD Simulation of Digital Logic Gates in Independent Double Gate Transistors – A Comparative Study between Conventional and Junctionless FETs

Transport and Electronic Properties of Two Dimensional Electron Gas in Delta-Migfet in Gaas

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