2019
DOI: 10.1038/s41467-018-08227-1
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Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

Abstract: Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of… Show more

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Cited by 49 publications
(40 citation statements)
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References 42 publications
(43 reference statements)
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“…In order to increase the amount of interface per unit area for improved PL intensity, we prepare in-plane heterostructures of graphene quantum dots in a h-BN monolayer by a spatially controlled conversion on Pt nanoparticles (Pt NPs) prepared with the aid of self-patterning diblock copolymer micelles 16 (GQD/h-BN, Fig. 2a, b ).…”
Section: Resultsmentioning
confidence: 99%
“…In order to increase the amount of interface per unit area for improved PL intensity, we prepare in-plane heterostructures of graphene quantum dots in a h-BN monolayer by a spatially controlled conversion on Pt nanoparticles (Pt NPs) prepared with the aid of self-patterning diblock copolymer micelles 16 (GQD/h-BN, Fig. 2a, b ).…”
Section: Resultsmentioning
confidence: 99%
“… (J) Schematic formation of multi-channel single-electron tunneling transistors based on the GQDs array with graphene electrodes and h-BN tunneling barriers. Reprinted with permission from ( Kim et al., 2019 ). Copyright 2019 Nature Publishing Group.…”
Section: Lateral Heterostructure Of Boron Nitride With Graphenementioning
confidence: 99%
“…Apart from the patterned regrowth approach, patterned h-BN/graphene lateral heterostructures can also be produced using a spatially controlled conversion from h-BN to graphene (or graphene to h-BN) without the need of an etching process ( Gao et al., 2015 ; Gong et al., 2014 ; Kim et al., 2015a ). Recently, lateral heterostructures composed of graphene quantum dots (GQDs) embedded in h-BN have also been developed by this catalytic conversion approach on Pt substrates ( Kim et al., 2019 ). Figure 7 H shows the schematic for converting h-BN to graphene on the surface of Pt NPs.…”
Section: Lateral Heterostructure Of Boron Nitride With Graphenementioning
confidence: 99%
“…In 2019, Kim G.W. et al [107] conducted research on the development of nextgeneration transistors for new technologies of ultra-fine semiconductor (graphene quantum dots). Graphene is a layer of atoms in which carbon atoms are connected in a hexagonal honeycomb shape.…”
Section: Doctor Bladementioning
confidence: 99%