Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene

Enhanced near-field coupling and tunable topological transitions in hyperbolic van der Waals metasurfaces for optical nanomanipulation

“…Natural h -BN slabs are precisely fabricated into nanogratings as meta -atoms by E-beam lithography on SiO 2 /Si substrates in the metasurface, 17,18,22,23 while monolayer graphene could be directly grown within the gaps between h -BN strips, forming alternate in-plane heterostructures. 24–26 To illustrate the topological transitions of the iHBNG metasurface, the effective anisotropic permittivities of individual h -BN metasurfaces are first calculated as below, according to a modified effective medium model, 17,18,27 where ξ is the filling factor. In this model, the nonlocal effect of strong polaritonic near-field coupling between strips is considered.…”

The interface microstructure and band alignment of hexagonal boron nitride/diamond heterojunctions

“…Due to the lack of catalytic activity of dielectric substrates, it is hard to nucleate and grow h-BN on diamond by the widely used chemical vapor deposition (CVD) method. 20,21 Currently, only a few attempts have been made to directly synthesize h-BN on diamond by physical vapor deposition methods. [22][23][24] Sankaran et al 22,23 deposited h-BN nano-walls on nanocrystalline diamond films by radio frequency sputtering for field electron emission applications.…”

Epitaxy of Hexagonal Boron Nitride Thin Films on Sapphire for Optoelectronics

“…As a two-dimensional (2D) wide band gap semiconductor, hexagonal boron nitride (h-BN) has recently drawn considerable attention due to its layered structure, exceptional properties, and wide applications. These excellent material properties of h-BN, including an atomically smooth surface, good thermal and chemical stability, high breakdown field, and low dielectric constant, allow it to be applied as the substrate of other 2D materials, gate dielectric or tunnel barrier of field effect transistors, and encapsulating layer of 2D heterojunctions. − In addition, despite h-BN being an indirect band gap semiconductor, it can still produce strong phonon-assisted deep ultraviolet (DUV) emission and even electroluminescence . A high band-edge absorption coefficient and high transmittance at visible and infrared wavelengths prove that h-BN is also appropriate for fabricating DUV photodetectors. − More recently, point defects in h-BN have attracted much research interest because of their single photon emission properties. − Therefore, h-BN is also a promising wide band gap semiconductor for optoelectronics applications.…”