The interface microstructure and band alignment of hexagonal boron nitride/diamond heterojunctions

Chen, Jingren; Tao, Ran; Wang, Gaokai; Yin, Z. G.; Zeng, Libin; Yu, Xinxin; Zhang, Siyu; Wang, Yun; Li, Zhonghui; Zhang, Xing Wang

doi:10.1039/d3tc00498h

Cited by 4 publications

(1 citation statement)

References 38 publications

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“…In order to avoid the influence of natural oxides on the surface of p-GaN, in-situ Ar + sputtering is used to remove oxides of the untreated p-GaN surface. In addition, by partially extrapolating the linear line to the background energy level [37], it is estimated that the valence band maximum (VBM) of GaN and GaON were 1.02 ± 0.03 eV and 2.80 ± 0.05 eV. By comparing the values of VBM and N 1s core level between GaN and GaON, the VBM offset was 0.7 eV and the VBM of the GaON is lower than that of the GaN.…”

Section: Resultsmentioning

confidence: 99%

Normally-off GaON/p-GaN gate HEMTs with selective plasma oxidation: from structural characterization, performance improvement to physical mechanism

Wu,

Xing,

Luo

et al. 2024

Semicond. Sci. Technol.

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In this letter, a p-GaN gate high-electron-mobility transistor (HEMT) with a high threshold voltage and better gate reliability was demonstrated by using selective plasma oxidation (SPO) and an additional low-temperature annealing step before gate metal is evaporated. After the SPO, a gallium oxynitride (GaON) dielectric layer was formed on the surface of p-GaN under the gate metal, and was studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), high-resolution transmission electron microscopy (HR-TEM) and energy dispersion spectroscopy (EDS). In addition, the fabricated metal/GaON/p-GaN gate HEMT exhibited a large threshold voltage (VTH) improvement from 1.46 V to 2.47 V. Furthermore, the forward gate breakdown voltage (VGS,BD) increased from 7.55 V to 11.10 V, and the maximum forward gate operating voltage (VGS-max) significantly improved from 5.0 V to 7.80 V for a ten-year lifetime with a 63.2% failure rate. Kelvin Probe Force Microscopy (KPFM) reveals that the surface potential increased after SPO, and the shift of valence band maximum (VBM) obtained by XPS spectra was 0.7 eV lower than that of the p-GaN, which further improves the Schottky barrier height (SBH) at the gate metal/GaON interfaces to holes, thereby improving VTH and reducing IGS of the device. As a barrier layer, GaON suppressed the injection of carrier into the depletion region under a high electric field and enhanced the reliability of the gate.

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Section: Resultsmentioning

confidence: 99%

Normally-off GaON/p-GaN gate HEMTs with selective plasma oxidation: from structural characterization, performance improvement to physical mechanism

Wu,

Xing,

Luo

et al. 2024

Semicond. Sci. Technol.

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Formation of a Boron‐Oxide Termination for the (100) Diamond Surface

Schenk,

Griffin,

Tadich

et al. 2024

Adv Materials Inter

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A boron‐oxide termination of the diamond (100) surface has been formed by depositing molecular boron oxide B2O3 onto the hydrogen‐terminated (100) diamond surface under ultrahigh vacuum conditions and annealing to 950 °C. The resulting termination is highly oriented and chemically homogeneous, although further optimization is required to increase the surface coverage beyond the 0.4 monolayer coverage achieved here. This work demonstrates the possibility of using molecular deposition under ultrahigh vacuum conditions for complex surface engineering of the diamond surface, and may be a first step in an alternative approach to fabricating boron doped delta layers in diamond.

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NaCl-assisted chemical vapor deposition growth of MoSe2 and MoSe2/h-BN heterostructure

Zhao,

Liu,

Huang

et al. 2024

Vacuum

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The interface microstructure and band alignment of hexagonal boron nitride/diamond heterojunctions

Abstract: Integrating two-dimensional (2D) hexagonal boron nitride (h-BN) layer on diamond for establishing the h-BN/diamond heterojunction is of considerable interest for the development of various diamond-based electronic devices. Herein, the 2D...

Cited by 4 publications

References 38 publications

Normally-off GaON/p-GaN gate HEMTs with selective plasma oxidation: from structural characterization, performance improvement to physical mechanism

Normally-off GaON/p-GaN gate HEMTs with selective plasma oxidation: from structural characterization, performance improvement to physical mechanism

Formation of a Boron‐Oxide Termination for the (100) Diamond Surface

NaCl-assisted chemical vapor deposition growth of MoSe2 and MoSe2/h-BN heterostructure

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