PL characterization of GaN scintillator for radioluminescence-based dosimetry

Pittet, Patrick; Lu, Guo‐Neng; Galvan, Jean‐Marc; Bluet, Jean‐Marie; Ismail, Anas; Giraud, Jean-Yves; Balosso, Jacques

doi:10.1016/j.optmat.2008.09.012

Cited by 37 publications

(22 citation statements)

References 13 publications

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“…The layer deposited at 1100 1C exhibits a strong luminescence with a maximum at 3.40 eV originating from band-edge transitions [35]. The asymmetric tail at higher wavelengths is related to shallow donors associated with oxygen impurities and defects.…”

Section: Resultsmentioning

confidence: 99%

GaN:Co epitaxial layers grown by MOVPE

Šimek

Sedmidubský

Klímová

et al. 2015

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

GaN:Co epitaxial layers grown by MOVPE

Šimek

Sedmidubský

Klímová

et al. 2015

Journal of Crystal Growth

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“…GaN-based detectors are beneficial due to their capability to generate both the electrical and optical signals. The GaN-based detectors raise technical interest in development of the double-purpose devices capable to operate both as scintillating and charge collecting detectors for tracking of high-energy particles [7][8][9][10]. The depth and lateral homogeneity of the sensor structures are therefore necessary to get the linear response of the detector [11].…”

Section: Introductionmentioning

confidence: 99%

Spectroscopy of defects in neutron irradiated ammono-thermal GaN by combining photoionization, photoluminescence and positron annihilation techniques

Pavlov

Čeponis

Deveikis

et al. 2020

physics

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In this work, pulsed photoionization as well as photoluminescence and positron annihilation spectroscopy were combined to detect different species of defects. The GaN crystals, grown by the ammono-thermal method, doped with Mn as well as Mg impurities and irradiated with different fluences of reactor neutrons, were examined to clarify the role of the technological and radiation defects. The evolution of the prevailing photoactive centres was examined by pulsed photoionization spectroscopy. Positron annihilation spectroscopy was applied to reveal vacancy-type defects.

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“…InGaN/GaN quantum well (QW) structures have been widely used for LEDs and lasers since early 1990s. More recently, the application of nitride heterostructures as fast scintillators for detectors of ionizing radiation have emerged . The advantages of nitride heterostructures compared to other scintillation materials are: high radiation resistance, high exciton binding energy, and consequently short luminescence decay time as well as high luminescence efficiency.…”

Section: Introductionmentioning

confidence: 99%

InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties

Hospodková

Hubáček

Oswald

et al. 2017

Physica Status Solidi (b)

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In this work we compare luminescence results obtained on InGaN/GaN multiple quantum well (QW) structures with 10 and 30 QWs. The aim is to increase the intensity of faster blue QW emission and decrease the luminescence of the QW defect band, showing a slower luminescence decay time, which is undesired for fast scintillator applications. We demonstrate that increasing the number of InGaN QWs is an efficient method to reach this goal. The luminescence improvement of the sample with higher number of QWs is explained by the influence of the increased size of V‐pits with increased QW number. Thinner QWs on the side wall of V‐pits serve as barriers which separate carriers from dislocations penetrating through the V‐pit centre, supressing thus the non‐radiative and radiative recombination on defects. Based on cathodoluminescence (CL) results, the scintillator structure design is discussed. Scintillator structures with higher number of QWs can take advantage of both, improved luminescence efficiency and thicker active region.

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PL characterization of GaN scintillator for radioluminescence-based dosimetry

Cited by 37 publications

References 13 publications

GaN:Co epitaxial layers grown by MOVPE

GaN:Co epitaxial layers grown by MOVPE

Spectroscopy of defects in neutron irradiated ammono-thermal GaN by combining photoionization, photoluminescence and positron annihilation techniques

InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties

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