Pinning of magnetic moments at the interfacial region of ultrathin CoO/Co bilayers grown on Ge(100)

Chang, Shin Chen; Tsay, Jyh-Jong; Chang, Cheng Hsun Tony; Yao, Y. D.

doi:10.1016/j.apsusc.2015.04.019

Cited by 9 publications

(5 citation statements)

References 37 publications

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“…Meanwhile, the increased magnetic coercive field (i.e. the magnetic flipping barrier) in the HRS can be attributed to the segregated oxygen atoms at the Co interface, which provide an additional pinning effect for the intrinsic magnetic reversal 26 (Fig. 4b ) and subsequently enhance the intrinsic spin flipping barrier.…”

Section: Discussionmentioning

confidence: 99%

Electric-field control of ferromagnetism through oxygen ion gating

Zhang

et al. 2017

Nat Commun

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Electric-field-driven oxygen ion evolution in the metal/oxide heterostructures emerges as an effective approach to achieve the electric-field control of ferromagnetism. However, the involved redox reaction of the metal layer typically requires extended operation time and elevated temperature condition, which greatly hinders its practical applications. Here, we achieve reversible sub-millisecond and room-temperature electric-field control of ferromagnetism in the Co layer of a Co/SrCoO2.5 system accompanied by bipolar resistance switching. In contrast to the previously reported redox reaction scenario, the oxygen ion evolution occurs only within the SrCoO2.5 layer, which serves as an oxygen ion gating layer, leading to modulation of the interfacial oxygen stoichiometry and magnetic state. This work identifies a simple and effective pathway to realize the electric-field control of ferromagnetism at room temperature, and may lead to applications that take advantage of both the resistance switching and magnetoelectric coupling.

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Section: Discussionmentioning

confidence: 99%

Electric-field control of ferromagnetism through oxygen ion gating

Zhang

et al. 2017

Nat Commun

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“…CoO is a compound of very broad interest in particular in the fields of catalysis [12,13], energy storage [14][15][16] and magnetism [17][18][19][20][21][22][23][24], being an antiferromagnetic insulator. Furthermore, CoO films coupled to ferromagnetic substrates (like Fe), show the well-known and technologically important exchange bias effect [25,26], which makes this kind of systems even more appealing.…”

Section: Introductionmentioning

confidence: 99%

Self-organized nano-structuring of CoO islands on Fe(001)

Brambilla

Picone

Giannotti

et al. 2016

Applied Surface Science

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“…19,20 The enhanced H E could be attributed to the increasing anisotropy energy of AFM layer K AFM and the increasing number of pinned uncompensated spins at the interface. 4,16 By further increasing the CoO thickness (x=40 ML), the H E at 170 K is reduced. For continuous AFM/FM layers, the increase of the AFM domain size is often observed and the related H E is commonly reduced due to the reduction of both the amount of AFM domain walls and the associated net uncompensated AFM magnetic moments.…”

Section: Methodsmentioning

confidence: 99%

“…EB is sensitive to AFM/FM interfacial conditions and therefore atomic-scale roughness, magnetic uncompensated AFM surface, crystallographic order, and strain effects may influence its performance. [1][2][3][4][5][6][7] For the last decade, EB has been used in commercial applications such as magnetic spin-valve sensor and magnetic random access memories. [8][9][10][11] As an example for thermally assisted-MRAM (TA-MRAM), a large exchange bias field (H E ), a reduced coercive force (H C ), and well-defined temperature variations of both characteristic fields are required.…”

Section: Introductionmentioning

confidence: 99%

Variation of blocking temperatures for exchange biased CoO/Co/Ge(100) films

Chang

Tsay

et al. 2016

AIP Advances

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Variations of the blocking temperature and related structures for CoO/Co/Ge(100) films are investigated by employing reflection high energy electron diffraction, Auger electron spectroscopy, and surface magneto-optic Kerr effect measurements. By increasing the CoO thickness, the blocking temperature is smaller than the Neel temperature of CoO. The monotonous increase of the blocking temperature is mainly attributed to the increasing thermal stability of the antiferromagnetic grains by way of increasing the antiferromagnetic thickness. The deviation of the blocking temperature from the linear relation and the full widths at half maximum of the diffraction spots show a similar trend. The minimums appear around 25 monolayer of CoO and are related to the formation of larger grains.

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Pinning of magnetic moments at the interfacial region of ultrathin CoO/Co bilayers grown on Ge(100)

Cited by 9 publications

References 37 publications

Electric-field control of ferromagnetism through oxygen ion gating

Electric-field control of ferromagnetism through oxygen ion gating

Self-organized nano-structuring of CoO islands on Fe(001)

Variation of blocking temperatures for exchange biased CoO/Co/Ge(100) films

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