A major challenge in molecular electronics is to develop logic devices based on a truly intramolecular switching mechanism. Recently, a new type of molecular device has been proposed where the switching characteristic is mediated by the bistability in the position of the two hydrogen atoms which can occupy different, energetically equivalent positions (tautomerization) in the inner cavity of porphyrins and naphthalocyanines. Up to now, such a reaction has only been exploited at low temperatures and induced or detected through atomic scale manipulation. In addition, the unpredictability of the tautomer orientation currently excludes molecular interconnection to functional electronic circuits. Here, full evidence is provided that, following a newly proposed growth strategy, 2D layers of metal-free tetraphenylporphyrins (H2TPP) show frozen tautomerization even at room temperature on macroscopic domains, with the H atoms aligned along a direction settled a priori. This behavior is ascribed to the buckling of the molecule, anchored to the substrate, which removes the degeneracy between the two tautomer alignments. On this basis, a new way to exploit uniaxially oriented H2TPP tautomers in a first elementary logic device is proposed

Metal-oxide interfaces play a fundamental role in determining the functional properties of artificial layered heterostructures, which are at the root of present and future technological applications. Magnetic exchange and magnetoelectric coupling, spin filtering, metal passivation, catalytic activity of oxide-supported nano-particles are just few examples of physical and chemical processes arising at metal-oxide hybrid systems, readily exploited in working devices. These phenomena are strictly correlated with the chemical and structural characteristics of the metal-oxide interfacial region, making a thorough understanding of the atomistic mechanisms responsible of its formation a prerequisite in order to tailor the device properties. The steep compositional gradient established upon formation of metal-oxide heterostructures drives strong chemical interactions at the interface, making the metal-oxide boundary region a complex system to treat, both from an experimental and a theoretical point of view. However, once properly mastered, interfacial chemical interactions offer a further degree of freedom for tuning the material properties. The goal of the present review is to provide a summary of the latest achievements in the understanding of metal/oxide and oxide/metal layered systems characterized by reactive interfaces. The influence of the interface composition on the structural, electronic and magnetic properties will be highlighted. Particular emphasis will be devoted to the discussion of ultra-thin epitaxial oxides stabilized on highly oxidizable metals, which have been rarely exploited as oxide supports as compared to the much more widespread noble and quasi noble metallic substrates. In this frame, an extensive discussion is devoted to the microscopic characterization of interfaces between epitaxial metal oxides and the Fe(001) substrate, regarded from the one hand as a prototypical ferromagnetic material and from the other hand as a highly oxidizable metal.

C molecules coupled to metals form hybrid systems exploited in a broad range of emerging fields, such as nanoelectronics, spintronics, and photovoltaic solar cells. The electronic coupling at the C/metal interface plays a crucial role in determining the charge and spin transport in C-based devices; therefore, a detailed understanding of the interface electronic structure is a prerequisite to engineering the device functionalities. Here, we compare the electronic and structural properties of C monolayers interfaced with Fe(001) and oxygen-passivated Fe(001)-p(1 × 1)O substrates. By combining scanning tunneling microscopy and spectroscopy, Auger electron spectroscopy, photoemission and inverse photoemission spectroscopies, we are able to elucidate the striking effect of oxygen on the interaction between Fe(001) and C. Upon C deposition on the oxygen-passivated surface, the oxygen layer remains buried at the C/Fe(001)-p(1 × 1)O interface, efficiently decoupling the fullerene film from the metallic substrate. Tunneling and photoemission spectroscopies reveal the presence of well-defined molecular resonances for the C/Fe(001)-p(1 × 1)O system, with a large HOMO-LUMO gap of about 3.4 eV. On the other hand, for the C/Fe(001) interface, a strong hybridization between the substrate states and the C orbitals occurs, resulting in broader molecular resonances.

In this work the density of states close to the Fermi level E F of the Fe͑001͒-p͑1 ϫ 1͒O surface is investigated, by means of scanning tunneling spectroscopy ͑STS͒. STS spectra are dominated by two features, located at about 0.5 eV below E F and 0.9 eV above E F . The comparison with ab initio density-functional theory simulations of the surface electronic structure shows a very good agreement and allows assigning the observed features to minority states of the sample surface.

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