Piezoresponse force microscopy investigations of Aurivillius phase thin films

Abstract

Access to the full text of the published version may require a subscription. 15 . The electromechanical responses of the materials were investigated using piezoresponse force microscopy and the results are discussed in relation to the crystallinity of the films as measured by x-ray diffraction. Rights

The structural and piezoresponse properties of c-axis-oriented Aurivillius phase Bi5Ti3FeO15 thin films deposited by atomic vapor deposition

“…After annealing, most of the grains are coalesced well and possess plate-like morphology forms, which is characteristic of layered structures of Aurivillius phase materials. 19 There is an approximate doubling of the grain size in the in-plane direction, which is in-proportion with the change in grain thickness measured in the out of plane direction reported above. The as-grown film has a thickness of 100 nm and no obvious change is observed after annealing in average thickness.…”

“…These results are significantly different from the samples on Si made by solgel method, where the orientation of grains is distributed randomly and strong phase and amplitude contrasts are clearly observed in vertical direction. 19 In summary, BTFO thin films were deposited on (001) Si substrates at 610 C by AVD with diluted liquid precursors and the structural and piezoelectric properties were investigated. A SiO 2 layer was formed before the deposition of BTFO layer to reduce the reaction between the BTFO film and Si substrate.…”

“…[11][12][13][14][15][16][17][18][19] While methods such as sol-gel, 12,19 solid-state reaction, 17,18 and pulsed laser deposition 4 20,21 Atomic vapor deposition (AVD) is based on pulsed liquid-injection chemical vapor deposition with a volume of each pulse of the order of microlitres. 22 It has been proved that AVD can deposit high-quality high-k dielectric or ferroelectric films with a largely uniform film thickness, composition, and electrical properties and is highly suitable for mass production.…”

Room temperature electromechanical and magnetic investigations of ferroelectric Aurivillius phase Bi5Ti3(FexMn1−x)O15 (x = 1 and 0.7) chemical solution deposited thin films

“…Previous work reported 24 the crystallization of BTFO thin films on Pt/Ti/SiO 2 -Si substrates at annealing temperatures of 850 C. With 5% excess bismuth, however, the presence of impurity pyrochlore phase Bi 2 Ti 2 O 7 is evident, as indicated by the presence of the (222) and (444) reflections. 24 Studies on the addition of between 0 and 35% excess bismuth to the BTFO sols demonstrate that the addition of at least 5% excess bismuth improves BTFO phase crystallinity and decreases the formation of Bi 2 Ti 2 O 7 pyrochlore phase (Joint Committee for Powder Diffraction Standard (JCPDS) No.…”

“…17 On increasing the number of perovskite layers (m), the microstructural, ferroelectric, magnetic, and other physical properties of the Aurivillius phase materials can be altered significantly. 18 In fact, the coexistence of ferroelectric and weak ferromagnetic properties at room temperature has been reported for the fourlayered Bi 5 24 Piezoresponse force microscopy (PFM) has been highly effective in the identification of these thin films as novel piezoelectric materials. 24 However, given the coexistence of pyrochlore phase Bi 2 Ti 2 O 7 in some of the films analyzed, it is expected that single-phase films would have enhanced piezoelectric properties.…”