Piezoresistive effect in top-down fabricated silicon nanowires

Reck, Kasper; Richter, Jacob; Hansen, Ole; Thomsen, Erik Vilain

doi:10.1109/memsys.2008.4443757

Cited by 50 publications

(43 citation statements)

References 10 publications

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“…This suggests an electrostatic origin for the giant PZR, for example due to electromechanically active interface states [11]. Although there is some evidence for such a component in the anomalous PZR at very high stresses [12,13], in most cases PZR close to the bulk value is observed [14][15][16][17][18][19], even in depleted [16] or gated [19] SiNWs. It is important to clarify this situation in part because a novel surface electromechanical phenomenon may be involved, but also in the context of sensing and strain effects on the electronic properties of future nanoscale silicon devices.…”

mentioning

confidence: 99%

Geometric and chemical components of the giant piezoresistance in silicon nanowires

McClarty

Jegenyés

Gaudet

et al. 2016

Applied Physics Letters

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A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-type silicon nanowires (SiNW), from the usual positive bulk effect to anomalous (negative) PZR and giant PZR. The origin of such a range of diverse phenomena is unclear, and consequently so too is the importance of a number of parameters including SiNW type (top down or bottom up), stress concentration, electrostatic field effects, or surface chemistry. Here, we observe all these PZR behaviors in a single set of nominally p-type, ⟨110⟩ oriented, top-down SiNWs at uniaxial tensile stresses up to 0.5 MPa. Longitudinal π-coefficients varying from −800 × 10−11 Pa−1 to 3000 × 10−11 Pa−1 are measured. Micro-Raman spectroscopy on chemically treated nanowires reveals that stress concentration is the principal source of giant PZR. The sign and an excess PZR similar in magnitude to the bulk effect are related to the chemical treatment of the SiNW

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mentioning

confidence: 99%

Geometric and chemical components of the giant piezoresistance in silicon nanowires

McClarty

Jegenyés

Gaudet

et al. 2016

Applied Physics Letters

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“…Such effects can diminish the performance of the nanoelectromechanical amplifier by increasing the operating temperature in the beam and power dissipation and therefore reducing the mechanical quality factor. However, the large piezoresistive coefficient observed in silicon nanowires [17][18][19] , along with the increase in the thermal expansion coefficient [20][21] , is expected to compensate for and even improve the overall device performance.…”

Section: Discussion Scaling and Performance Improvementmentioning

confidence: 99%

Nanoelectromechanical resonant narrow-band amplifiers

2016

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This study demonstrates amplification of electrical signals using a very simple nanomechanical device. It is shown that vibration amplitude amplification using a combination of mechanical resonance and thermal-piezoresistive energy pumping, which was previously demonstrated to drive self-sustained mechanical oscillation, can turn the relatively weak piezoresistivity of silicon into a viable electronic amplification mechanism with power gains of 420 dB. Various functionalities ranging from frequency selection and timing to sensing and actuation have been successfully demonstrated for microscale and nanoscale electromechanical systems. Although such capabilities complement solid-state electronics, enabling state-of-the-art compact and high-performance electronics, the amplification of electronic signals is an area where micro-/nanomechanics has not experienced much progress. In contrast to semiconductor devices, the performance of the proposed nanoelectromechanical amplifier improves significantly as the dimensions are reduced to the nanoscale presenting a potential pathway toward deep-nanoscale electronics. The nanoelectromechanical amplifier can also address the need for ultranarrow-band filtering along with the amplification of lowpower signals in wireless communications and certain sensing applications, which is another need that is not efficiently addressable using semiconductor technology.

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“…Nanowire devices fabricated by T. Toriyama et al [7] and He and Yang et al [8] both had a suspended structure. K. Reck et al [9] produced p-type silicon nanowires from 140nm to 480nm wide on solid substrates. They observed an enhancement of 633% in piezoresistance for the smallest nanowire of 140nm width and 200nm thickness under compressive stress.…”

Section: Introductionmentioning

confidence: 99%

Medium doped non-suspended silicon nanowire piezoresistor using SIMOX substrate

Tan

Mitchell

McNeill

et al. 2016

2016 International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES)

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Abstract-This paper reports on the enhanced piezoresistive effect in p-type <110> silicon nanowires, fabricated using a top down approach. The silicon nanowire width is varied from 100 to 500nm with thickness of 200 nm and length of 9µm. It is found that the piezoresistive effect increases when the nanowire width is reduced below 350 nm. Compared with micrometre sized piezoresistors, silicon nanowires have produced up to 50% enhancement. Silicon nanowire with cross-section of (100 × 200 nm) with doping concentration of 3.2 × 10 18 cm -3 has produced a gauge factor of 150. The extracted gauge factors are compared with other silicon nanowire experimental publications. The enhancement in piezoresistive effect by employing non-suspended silicon nanowire is beneficial for new MEMS pressure sensors with medium doping concentrations.

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Piezoresistive effect in top-down fabricated silicon nanowires

Cited by 50 publications

References 10 publications

Geometric and chemical components of the giant piezoresistance in silicon nanowires

Geometric and chemical components of the giant piezoresistance in silicon nanowires

Nanoelectromechanical resonant narrow-band amplifiers

Medium doped non-suspended silicon nanowire piezoresistor using SIMOX substrate

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