1991
DOI: 10.1016/0924-4247(91)85017-i
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Piezoresistance effect of silicon

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Cited by 346 publications
(216 citation statements)
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“…100 ) is larger than the dimensional changes by a factor of 50, thus the latter can be ignored. 16 In case of a uniaxial stress (σ ) and parallel current flow, the relative resistance change is…”
Section: B Sensitivity: Electromechanical Modelmentioning
confidence: 99%
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“…100 ) is larger than the dimensional changes by a factor of 50, thus the latter can be ignored. 16 In case of a uniaxial stress (σ ) and parallel current flow, the relative resistance change is…”
Section: B Sensitivity: Electromechanical Modelmentioning
confidence: 99%
“…In order to maximize the devices sensitivity, the cantilevers are oriented along the non-standard 100 direction on the wafer surface. 16 A common denominator of different fabrication technologies is the need of testing large number of devices across several wafers. This need is not specific to MEMS and wafer scale testing has been used over the years to test electronic devices.…”
Section: Introductionmentioning
confidence: 99%
“…For a first calculation, we used the following parameters: ␤Ϸ0.8 and L Ϸ4.5ϫ10 Ϫ10 m 2 N Ϫ1 . 4,16 These quantities are subject to some fluctuations related to the microfabrication process.…”
Section: A Two-leg Levermentioning
confidence: 99%
“…The inevitable temperature dependence of the piezoresistive coefficient L and of the resistance itself also affect the sensitivity. 16 From the voltage noise level observed during the calibration process, the typical resolution of the device can be estimated. In the dynamic regime, the resolution is about 10 Ϫ14 Nm, whereas for the static regime it reaches 10…”
Section: B Calibration and Resolutionmentioning
confidence: 99%
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