Piezoresistance and electrical resistivity of Pd, Au, and Cu films

Jen, S. U.; Yu, Cheng Chia; Liu, C.H.; Lee, G.Y.

doi:10.1016/s0040-6090(03)00504-2

Cited by 47 publications

(33 citation statements)

References 10 publications

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“…12 From Table I, it is found that the surface of single-layered Ni͑85͒ is quite smooth. Therefore, before coalescence of the top Au layer, 13,14 i.e., if x ഛ 300 Å, there are always good chances of forming many Au nanoparticles on the Ni surface.…”

Section: Methodsmentioning

confidence: 99%

Enhancement of polar Kerr effect by forming Au nanoparticles on Ni surface

Jen

Chen

2005

Journal of Applied Physics

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Au ( x ) ∕ Ni ( y ) ∕ glass ( sub ) bilayered films, with x ranging from 0to310Å and y=85Å, were made by the vapor evaporation method in vacuum. The surface morphology of each bilayer was examined by an atomic force microscope. The results show that when x=xm=25 and 100Å, respectively, there were, in particular, a large number of Au nanoparticles (or nanoislands) forming on top of the Ni surface. As a result, we observed considerable enhancement in either the polar Kerr rotation θK or the extraordinary Hall coefficient RS at these two thicknesses. As is well known, the penetration depth δP of the electron transverse flow, crossing the Au∕Ni interface from the Ni to the Au layer, is of the order of the electron mean free path ℓAu, i.e., δP=(3∕8)ℓAu≈116Å, in the Au layer. Hence, the situation xm<δP is always satisfied. Then, the strong enhancement of θK is due to the surface plasma resonance effect on the Au nanoparticles (e.g., by reducing the real part of the diagonal dielectric tensor εxx so that Re[εxx(ω)]≈1, where ℏω=1.96eV). Moreover, the formation of Au nanoparticles roughens the bilayer’s surface. That means the enhancement of RS is due to the increase of the surface resistivity ρS. Finally, since the side-jump mechanism is effective, it could affect θK too (e.g., by enhancing the imaginary part of the off-diagonal conductivity Im[σxy]).

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Section: Methodsmentioning

confidence: 99%

Enhancement of polar Kerr effect by forming Au nanoparticles on Ni surface

Jen

Chen

2005

Journal of Applied Physics

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“…There are some exceptions, such as nickel for which large negative gauge factor have been measured (GF D 12) [39]. However, the gauge factor of metals is a function of sheet resistivity which can be controlled by the thickness of a metal thin film [37,40]. It has been observed that initially GF of metal thin films decreases from the initial bulk value when thinned.…”

Section: Piezoresistive (Detection)mentioning

confidence: 99%

Transduction

Schmid¹,

Villanueva²,

Roukes³

2016

Fundamentals of Nanomechanical Resonators

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The efficient transduction of nanomechanical resonators is quintessential for any practical application. In the context of this book, transduction refers to the translation of mechanical motion to an electrical signal and vice versa for detection and actuation, respectively. In this chapter the most common underlying physical transducing mechanisms are quickly introduced. Most of these mechanisms are of an electrical nature, such as electrodynamic, electrostatic, thermoelastic, piezoresistive, or piezoelectric transduction. Nanomechanical resonators transduced with one of these techniques are therefore known as nanoelectromechanical systems (NEMS). But it is also common practice to transduce nanomechanical resonators by optic means. The full optic transduction and control of nanomechanical resonators is, e.g., employed in the field of cavity optomechanics.

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“…28, a thickness of 30 nm and a conductivity r ¼ r Au /3 (r Au ¼ 4.5 Â 10 7 SÁm À1 ) were chosen for the design of the piezoresistive circuit. As explained in Sec.…”

Section: B Piezoresistance Designmentioning

confidence: 99%

Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy

Boubekri

Cambril

Couraud

et al. 2014

Journal of Applied Physics

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Note: Micro-cantilevers with AlN actuators and PtSi tips for multi-frequency atomic force microscopy Rev. Sci. Instrum. 83, 096107 (2012); 10.1063/1.4755749 Mechanism of eliminating basal plane dislocations in SiC thin films by epitaxy on an etched substrateCantilevers with resonance frequency ranging from 1 MHz to 100 MHz have been developed for dynamic atomic force microscopy. These sensors are fabricated from 3C-SiC epilayers grown on Si(100) substrates by low pressure chemical vapor deposition. They use an on-chip method both for driving and sensing the displacement of the cantilever. A first gold metallic loop deposited on top of the cantilever is used to drive its oscillation by electrothermal actuation. The sensing of this oscillation is performed by monitoring the resistance of a second Au loop. This metallic piezoresistive detection method has distinct advantages relative to more common semiconductor-based schemes. The optimization, design, fabrication, and characteristics of these cantilevers are discussed. V C 2014 AIP Publishing LLC. [http://dx.

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Piezoresistance and electrical resistivity of Pd, Au, and Cu films

Cited by 47 publications

References 10 publications

Enhancement of polar Kerr effect by forming Au nanoparticles on Ni surface

Enhancement of polar Kerr effect by forming Au nanoparticles on Ni surface

Transduction

Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy

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