Piezoelectric fields in nitride devices

Beach, Robin; McGill, T. C.

doi:10.1116/1.590820

Cited by 27 publications

(17 citation statements)

References 15 publications

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“…InAlN/GaN heterostructure field-effect transistors (HFETs) have lately attracted great attention [1]- [5] due to latticematched heterointerface, large bandgap of InAlN, high conduction band discontinuity ( E C ), and enhanced piezoelectric and spontaneous polarization effects [6], [7]. Therefore, improved transport property, decreased gate leakage current, improved channel confinement capability, high two-dimensional electron gas concentration (n 2DEG ) can be obtained as compared to the AlGaN/GaN heterostructures [8].…”

Section: Introductionmentioning

confidence: 99%

Improved Ultraviolet Detection and Device Performance of Al₂O₃-Dielectric In_0.17Al_0.83N/AlN/GaN MOS-HFETs

Lee

Yao

Huang

et al. 2019

IEEE J. Electron Devices Soc.

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Ultraviolet (UV) detection and electrical characteristics of In 0.17 Al 0.83 N/AlN/GaN metaloxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with Al 2 O 3 gate-dielectric and passivation formed by using ultrasonic spray pyrolysis deposition (USPD) are studied with respect to a conventional Schottky-gate HFET. The present MOS-HFET (Schottky-gate HFET) has demonstrated superior spectral responsivity (SR) of 360 (340) A/W at 350 nm at V GS = 5(3) V and V DS = 6(7) V, maximum drain-source saturation current density (I DS,max ) of 810.5 (546.6) mA/mm, maximum extrinsic transconductance of (g m,max ) of 180.4 (221.2) mS/mm, gate-voltage swing (GVS) of 2.4 (0.5) V, on/off current ratio (I on /I off ) of 5.5 × 10 8 (1.7 × 10 5 ), two-terminal off-state gate-drain breakdown voltage (BV GD ) of −158.5 (−127) V, three-terminal drain-source breakdown voltage (BV DS ) of 162 (83.4) V at V GS = −10 V, and power-added efficiency (P.A.E.) of 26.3% (16.5%) at 2.4 GHz at 300 K. In addition to the improved device performance, this paper demonstrates, for the first time, the UV sensing based on an InAlN/AlN/GaN MOS-HFET design.

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Section: Introductionmentioning

confidence: 99%

Improved Ultraviolet Detection and Device Performance of Al₂O₃-Dielectric In_0.17Al_0.83N/AlN/GaN MOS-HFETs

Lee

Yao

Huang

et al. 2019

IEEE J. Electron Devices Soc.

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“…Nevertheless, harvesting energy from ambient mechanical sources still requires further optimization to maximize the output from a specific material, and at the same time provide a practical device that delivers energy solutions in a way that is easy to incorporate into a system. Therefore, different materials have been studied in order to fabricate optimized devices for harvesting a sufficient amount of piezoelectric potential from a suitable material [3][4][5]. One important feature of an efficient piezoelectric harvesting system is that it should produce high output at low operating frequency.…”

Section: Introductionmentioning

confidence: 99%

A Flexible Sandwich Nanogenerator for Harvesting Piezoelectric Potential from Single Crystalline Zinc Oxide Nanowires

Nour

Khan

Nur

et al. 2014

Nanomaterials and Nanotechnology

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High-quality single crystalline zinc oxide nanowires were grown on silver and gold coated plastic substrates for the fabrication of a sandwich-like nanogenerator using the aqueous chemical growth method. The applicability of this configuration as a nanogenerator is demonstrated by studying the harvested electrical output under mechanical deformation. Three different configurations were fabricated and utilized for harvesting piezoelectric potential by applying an external force. The maximum resulting output open circuit voltage and short circuit current were 2.4 V and 152.2 mu A, respectively. The comparison between the different configurations indicates that more piezoelectric potential can be harvested by using two arrays of ZnO NWs placed face-to-face than by using a single nanowire configuration. In addition, the use of a piezoelectric polymer will enhance the amount of generated piezoelectric potential. The obtained results from different configurations of zinc oxide nanowire nanogenerators offer a cost-effective, flexible, long term stable nanogenerator for promising application. The principle of the sandwich nanogenerator demonstrated a new idea for novel self-powering nanotechnology that harvests electricity from the environment for applications such as portable electronics

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“…The conduction channel within the AlGaN/GaN heterointerface is formed by the 2-D electron gas (n 2DEG ) introduced by the piezoelectric and spontaneous polarization effects [1], [2]. Nevertheless, deteriorated gate leakages and device linearity were observed due to the issues of surface states and limited Schottky-barrier height.…”

mentioning

confidence: 96%

Investigations of TiO₂–AlGaN/GaN/Si-Passivated HFETs and MOS-HFETs Using Ultrasonic Spray Pyrolysis Deposition

Lee

Hsu

Chou

et al. 2015

IEEE Trans. Electron Devices

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Comparative studies for TiO 2 -passivated Al 0.25 Ga 0.75 N/GaN heterostructure FETs (HFETs) and TiO 2 -dielectric MOS-HFETs using nonvacuum ultrasonic spray pyrolysis deposition technique are made. Optimum device performances are obtained by tuning the layer thickness of TiO 2 to 20 nm. High relative permittivity (k) of 53.6 and thin effective oxide thickness of 1.45 nm are also obtained. Pulse-IV, Hooge coefficient (α H ), Transmission Electron Microscopy, and atomic force microscope have been performed to characterize the interface, atomic composition, and surface flatness of the TiO 2 oxide. Superior improvements for the present TiO 2 -dielectric MOS-HFET/TiO 2 -passivated HFETs are obtained, including 47.6%/23.8% in two-terminal gate-drain breakdown voltage (BV GD ), 111%/22.2% in two-terminal gate-drain turn-ON voltage (V ON ), 47.9%/39.4% in ON-state breakdown (BV DS ), 12.2%/10.2% in drain-source current density (I DS ) at V GS = 0 V (I DSS0 ), 27.2%/11.7% in maximum I DS (I DS,max ), 3/1-order enhancement in ON/OFF current ratio (I ON /I OFF ), 58.8%/17.6% in gate-voltage swing linearity, 25.1%/13.2% in unity-gain cutoff frequency ( f T ), 40.6%/24.7% in maximum oscillation frequency ( f max ), and 33.8%/15.6% in power-added efficiency with respect to a Schottky-gated HFET fabricated on the identical epitaxial structure. The present MOS-HFET has also shown stable electrical performances when the ambient temperature is varied from 300 to 450 K. Index Terms-AlGaN/GaN/Si, high temperature, MOS-heterostructure FET (HFET), passivation, TiO 2 , ultrasonic spray pyrolysis deposition (USPD).

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Piezoelectric fields in nitride devices

Cited by 27 publications

References 15 publications

Improved Ultraviolet Detection and Device Performance of Al₂O₃-Dielectric In_0.17Al_0.83N/AlN/GaN MOS-HFETs

Improved Ultraviolet Detection and Device Performance of Al₂O₃-Dielectric In_0.17Al_0.83N/AlN/GaN MOS-HFETs

A Flexible Sandwich Nanogenerator for Harvesting Piezoelectric Potential from Single Crystalline Zinc Oxide Nanowires

Investigations of TiO₂–AlGaN/GaN/Si-Passivated HFETs and MOS-HFETs Using Ultrasonic Spray Pyrolysis Deposition

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Piezoelectric fields in nitride devices

Cited by 27 publications

References 15 publications

Improved Ultraviolet Detection and Device Performance of Al2O3-Dielectric In0.17Al0.83N/AlN/GaN MOS-HFETs

Improved Ultraviolet Detection and Device Performance of Al2O3-Dielectric In0.17Al0.83N/AlN/GaN MOS-HFETs

A Flexible Sandwich Nanogenerator for Harvesting Piezoelectric Potential from Single Crystalline Zinc Oxide Nanowires

Investigations of TiO2–AlGaN/GaN/Si-Passivated HFETs and MOS-HFETs Using Ultrasonic Spray Pyrolysis Deposition

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Improved Ultraviolet Detection and Device Performance of Al₂O₃-Dielectric In_0.17Al_0.83N/AlN/GaN MOS-HFETs

Improved Ultraviolet Detection and Device Performance of Al₂O₃-Dielectric In_0.17Al_0.83N/AlN/GaN MOS-HFETs

Investigations of TiO₂–AlGaN/GaN/Si-Passivated HFETs and MOS-HFETs Using Ultrasonic Spray Pyrolysis Deposition