Piezoelectric field effects on electron density in a δ-doped AlGaAs/InyGa1-yAs/GaAs pseudomorphic HEMT

Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (311)A GaAs substrates

“…These results show an improvement in electron density when thickness of InGaAs QW increases, which is in qualitative agreement with our previous theoretical study [26].…”

“…However, heterojunctions grown on high index GaAs substrates ((N 1 1) planes with N Z1) of GaAs substrates have shown optical and transport properties that are better than those obtained in samples grown on (1 0 0) surfaces [24][25][26][27]. Mobility enhancement in the two-dimensional hole gas was also observed in GaAs/AlGaAs heterostructures grown on (3 1 1)A surfaces using silicon as an acceptor [28].…”

A novel Al0.33Ga0.67As/In0.15Ga0.85As/GaAs quantum well Hall device grown on (111) GaAs

“…We notice two important things. First, an enhancement of the electron density which is mainly due to the incorporation of a piezoelectric field within the pseudomorphically strained active layer in the structure grown on (111) GaAs substrate [7]. Second, a shift of the waveform ψ 0 to the right side by almost 5 nm.…”

“…The key parameters for such devices which determine their sensitivity to magnetic field are their high electron mobility and low electron density. In a previous study, we have investigated the effect of piezoelectric field built in AlGaAs/InGaAs/GaAs pseudomorphic HEMT grown on (111)A substrate, and we have found that both electron density and mobility are enhanced [7]. In this paper, we combine results determined both in [6] and [7], and we report the design of a new two-dimensional electron gas Hall device based on AlGaAs/InGaAs/GaAs heterostructure, which was particularly optimized for low magnetic field measurements.…”

Effect of growth temperature on InAs wetting layer grown on (113)A GaAs by molecular beam epitaxy

“…Growth studies have also been realised with the intention of controlling size, shape and number densities of the QDs [25]. The growth control and the valid results, obtained on these structures, which are elaborated on high-index substrates, have permitted to improve optical and electrical properties of many compounds [26][27][28][29]. In our study, therefore, we investigated the InAs wetting layer grown on (1 1 3)A GaAs by in situ intensities of the reflexion highenergy electron diffraction (RHEED) patterns as a function of the time growth for different substrate temperatures (430, 460 and 500 1C).…”