Piezoelectric and thermoelectric response of cuprous oxide, Cu2O

Chang, Victor P.; Rojas, Humberto; Jorge, José

doi:10.1016/0924-4247(93)80064-n

Sensors and Actuators A: Physical

1993

DOI: 10.1016/0924-4247(93)80064-n

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Piezoelectric and thermoelectric response of cuprous oxide, Cu2O

Victor P. Chang

Humberto Rojas

José Jorge

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Cited by 5 publications

(2 citation statements)

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“…Figure 4 shows the dependence of the Seebeck coefficient on temperature for all of the samples. The Seebeck coefficient increased with the increase in the test temperature, in accordance with Cu 2 O powders 25 or Cu 2 O crystals, 26 but in contrast to the data of Greenwood and Anderson. They found that the Seebeck coefficient was almost temperatureindependent for temperatures below 625 K. 27 The dependence of the Seebeck coefficient on temperature means that there were two species of current carriers, namely, electrons and holes.…”

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confidence: 76%

The n-type conduction of indium-doped Cu2O thin films fabricated by direct current magnetron co-sputtering

Cai

et al. 2015

Applied Physics Letters

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Indium-doped Cu2O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O2. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu2O, with no other phases detected. Indium atoms exist as In3+ in Cu2O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu2O and, therefore, lead to n-type conduction.

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supporting

confidence: 76%

The n-type conduction of indium-doped Cu2O thin films fabricated by direct current magnetron co-sputtering

Cai

et al. 2015

Applied Physics Letters

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“…9 Cuprous oxide is also used as a solar cell and piezoelectric and thermoelectric sensor material. 10 Cu 2 O has been manufactured by electrochemical techniques such as anodic oxidation [11][12][13] and cathodic deposition. 3,4 In anodic oxidation, under optimal preparation condition, passivating oxide (Cu 2 O) layers are formed on copper in alkaline media and render the metal resistant against corrosion and also show interesting semiconduction properties.…”

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confidence: 99%

Epitaxial Growth of Cu[sub 2]O (111) by Electrodeposition

Lee

Tak

1999

Electrochem. Solid-State Lett.

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Cuprous oxide (Cu 2 O)(111) crystals have been prepared at 65°C in weak acidic media (pH 4.7) by electrodeposition. The morphology was observed by scanning electron microscopy and X-ray diffraction analysis was used for investigation of the crystal phase. When a low cathodic current, -0.5 mA/cm 2 , was applied crystals formed on platinum electrode having only one phase, Cu 2 O (111), and cuprous oxide was epitaxially grown with a triangular structure of (111) phase although the electrolysis time was different. The role of a local enhancement of pH at the cathode is observed to have facilitated the deposition of Cu 2 O in weak acidic solution.Recently, various metal oxides such as AgO, 1 Tl 2 O 3 , 2 Cu 2 O, 3,4 and ZnO 5-7 have been prepared by electrochemical deposition due to the following several advantages: (i) thickness and morphology of films can be controlled precisely by adjusting electrochemical parameters, (ii) relatively uniform films can be formed on substrates of complex shapes, (iii) higher deposition rates can be easily obtained, and (iv) the equipment required is inexpensive due to the non requirement of either high vacuum or high reaction temperatures. 8 Cu 2 O is a p-type semiconductor having 2.0 eV bandgap energy and is an attractive photocatalytic material for water splitting into H 2 and O 2 under visible light irradiation. 9 Cuprous oxide is also used as a solar cell and piezoelectric and thermoelectric sensor material. 10 Cu 2 O has been manufactured by electrochemical techniques such as anodic oxidation 11-13 and cathodic deposition. 3,4 In anodic oxidation, under optimal preparation condition, passivating oxide (Cu 2 O) layers are formed on copper in alkaline media and render the metal resistant against corrosion and also show interesting semiconduction properties. Switzer et al. 3 investigated electrodeposition of Cu 2 O in alkaline copper(II) lactate solution and discussed the effect of pH and solution temperature on the film formation. They observed that Cu 2 O crystals have different orientation depending on the pH value of the solution. Cu 2 O films are deposited with (100) four-sided pyramid at pH 9, while Cu 2 O (111) has a triangular structure at pH 12. With increasing temperature, grain size of the films is reported to increase. They used the alkaline solution to make the Cu 2 O film because Cu + is stable in the alkaline solution from Pourbaix diagram. Tanaka et al. 4 investigated the effect of anions on the electrodeposition of Cu 2 O and observed the following during the formation of Cu 2 O and Cu with different cathodic potentials: (i) Cu 2 O has hexahedral, polyhedral crystals and Y-shaped particles in perchlorate, sulfate, and chlorate solutions, respectively, (ii) Cu 2 O was formed and grew larger at higher than -0.55 V (vs. saturated calomel electrode, SCE), while below -0.55 V both Cu and Cu 2 O were deposited on the surface.In this work, we report the observation that cuprous oxide can be prepared in solution with low pH. In acidic solution, Cu + is reduced to Cu metal...

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Improving thermoelectric properties of Cu2O powder via interface modification

Zhang

Xue

et al. 2022

Solid State Communications

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Piezoelectric and thermoelectric response of cuprous oxide, Cu2O

Cited by 5 publications

References 2 publications

The n-type conduction of indium-doped Cu2O thin films fabricated by direct current magnetron co-sputtering

The n-type conduction of indium-doped Cu2O thin films fabricated by direct current magnetron co-sputtering

Epitaxial Growth of Cu[sub 2]O (111) by Electrodeposition

Improving thermoelectric properties of Cu2O powder via interface modification

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