Picosecond electron bunches from GaAs/GaAsP strained superlattice photocathode

Jin, Xiuguang; Matsuba, Shunya; Honda, Y.; Miyajima, Tsukasa; Yamamoto, Masahiro; Utiyama, Takashi; Takeda, Yoshikazu

doi:10.1016/j.ultramic.2013.04.008

Cited by 17 publications

(3 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…according to (14) with γ = 0. Note that ( 16) is an exact solution, and it agrees with the previously reported result based on a diffusion-only model 16 .…”

Section: B Uniform-doping Vs Gradient-dopingmentioning

confidence: 99%

See 1 more Smart Citation

Photoelectron Transportation Dynamics in GaAs Photocathodes

Zhou,

Jani,

Zhang

et al. 2021

Preprint

View full text Add to dashboard Cite

We report here a general theory describing photoelectron transportation dynamics in GaAs semiconductor photocathodes. Gradient doping is incorporated in the model through the inclusion of directional carrier drift. The time-evolution of electron concentration in the active layer upon the injection of an excitation pulse is solved both numerically and analytically. The predictions of the model are compared with experiments via carrier-induced transient reflectivity change, which is measured for gradient-doped and uniform-doped photocathodes using femtosecond pump-probe reflectometry. Excellent agreement is found between the experiments and the theory, leading to the characterization of key device parameters such as diffusion constant and electron decay rates. Comparisons are also made between uniform doping and gradient doping for their characteristics in photoelectron transportation. Doping gradient is found to be able to accelerate electron accumulation on the device surface. These results offer new insights into the dynamics of III-V photocathodes and potentially open a new avenue toward experimental characterization of device parameters.

show abstract

“…according to (14) with γ = 0. Note that ( 16) is an exact solution, and it agrees with the previously reported result based on a diffusion-only model 16 .…”

Section: B Uniform-doping Vs Gradient-dopingmentioning

confidence: 99%

“…Meanwhile, an important application of III-V photocathodes is the generation of electron bunches using pulsed lasers [12][13][14][15] . Pulsed lasers have also been utilized to investigate the carrier-diffusion dynamics in GaAs photocathodes 12,13,16 .…”

Section: Introductionmentioning

confidence: 99%

Photoelectron Transportation Dynamics in GaAs Photocathodes

Zhou,

Jani,

Zhang

et al. 2021

Preprint

View full text Add to dashboard Cite

show abstract

“…The most common one uses the photoemission of electrons from III-V semiconductors with circularly polarized light [68][69][70][71]. Under particular conditions of strain, the photocathode can generate an electron beam with polarization ~ 0.9, while the selection of the light polarization switches easily the polarization vector of the beam.…”

Section: Electron and Photon Sourcesmentioning

confidence: 99%

Imaging at the Mesoscale (LEEM, PEEM)

Sala

2020

Springer Handbooks

View full text Add to dashboard Cite

TO BE PUBLISHED IN SPRINGER HANDBOOK OF SURFACE SCIENCE (SPRINGER VERLAG)TABLE OF CONTENTS 1. INTRODUCTION 2. CATHODE LENS MICROSCOPY 2.1. OPERATING PRINCIPLES 2.2. INSTRUMENTATION 2.2.1. BEAM SEPARATOR 2.2.2. ENERGY ANALYZERS 2.2.3. ABERRATION CORRECTORS 2.2.4. ELECTRON AND PHOTON SOURCES 2.3. PERFORMANCES 3. LOW ENERGY ELECTRON MICROSCOPY 3.0.1 BASIC IMAGE CONTRAST 3.0.2 IMAGE FORMATION 3.1 IMAGING MODE 3.1.1 LEEM AND LEEM-IV 3.1.2 BRIGHTFIELD AND DARKFIELD LEEM 3.1.3 MIRROR ELECTRON MICROSCOPY 3.1.4 SPIN POLARIZED LEEM 3.1.5 ELECTRON ENERGY LOSS MICROSCOPY 3.2 DIFFRACTION MODE 3.2.1 U-LEED 3.2.2 SPOT PROFILE ANALYSIS AND LEED-IV 3.3 SPECTROSCOPY MODE 3.3.1 U-EELS 4 PHOTOEMISSION ELECTRON MICROSCOPY 4.0.1 BASIC IMAGE CONTRAST 4.0.2 SPACE CHARGE EFFECTS 4.1 IMAGING MODE 4.1.1 PEEM AND XPEEM 4.1.2 BRIGHTFIELD AND DARKFIELD PEEM 4.1.3 XAS-PEEM AND MAGNETIC PEEM IMAGING 4.2 DIFFRACTION MODE 4.2.1 U-ARPES AND U-XPD 4.3 SPECTROSCOPY MODE 4.3.1 U-XPS 5 PERSPECTIVES

show abstract

Instrumentation

Bauer¹

2014

Surface Microscopy With Low Energy Electrons

View full text Add to dashboard Cite

Picosecond electron bunches from GaAs/GaAsP strained superlattice photocathode

Cited by 17 publications

References 19 publications

Photoelectron Transportation Dynamics in GaAs Photocathodes

Photoelectron Transportation Dynamics in GaAs Photocathodes

Imaging at the Mesoscale (LEEM, PEEM)

Instrumentation

Contact Info

Product

Resources

About