2016
DOI: 10.1016/j.apsusc.2016.03.121
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Picosecond dynamics of photoexcited carriers in interacting silicon nanocrystals

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Cited by 5 publications
(2 citation statements)
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“…Parameters B and C for each sample can be determined from fitting the data measured under the highest and lowest pump fluence. The initial carrier density N 0 was estimated using the procedure described in 13 . For intermediate pump powers, we fix the B and C and our fitting parameters are N 0 and y 0 .…”
Section: Resultsmentioning
confidence: 99%
“…Parameters B and C for each sample can be determined from fitting the data measured under the highest and lowest pump fluence. The initial carrier density N 0 was estimated using the procedure described in 13 . For intermediate pump powers, we fix the B and C and our fitting parameters are N 0 and y 0 .…”
Section: Resultsmentioning
confidence: 99%
“…It should be noted that the PL lifetimes discussed in this work are in the range of 1–10 μs, which is many orders of magnitude longer than the characteristic time of Auger recombination in Si QD assemblies. 35 FRET is a donor deexcitation mechanism with rate k T that competes with the radiative and nonradiative decay mechanisms of the excited donor state. The efficiency of energy transfer ( E ) 36 is the fraction of photons absorbed by the donor which are transferred to the acceptor.…”
Section: Resultsmentioning
confidence: 99%