We report results of investigating carrier recombination in silicon nanocrystal/silicon dioxide superlattices. The superlattices prepared by nitrogen-free plasma enhanced chemical vapour deposition contained layers of silicon nanocrystals. Femtosecond transient transmission optical spectroscopy was used to monitor carrier mechanisms in the samples. The three-particle Auger recombination was observed in accord with previous reports. However, under high pump intensities (high photoexcited carrier densities) the bimolecular process dominated the recombination. Detailed analysis of measured data and fitting procedure made it possible to follow and quantify the interplay between the two recombination processes. The bimolecular recombination was interpreted in terms of the trap-assisted Auger recombination.
In dielectric laser acceleration, nanostructures etched into silicon are used to convert free-space ultrashort laser pulses, incident from the side and parallel to the wafer substrate, to accelerate particles. This current approach is experimentally challenging and, as it turns out, not quite necessary for most experiments and practical applications. Here, we experimentally demonstrate and numerically verify the efficacy of top-illuminated structures, and measure a maximum acceleration gradient of 49.2 ± 3.1 MeV/m. We discuss how, in practice, this approach proves superior to the current standard in the field, and expect it to become the definitive choice for nanophotonic particle laser acceleration.
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