Picosecond dynamics of a silicon donor based terahertz detector device

Bowyer, E.; Villis, B. J.; Li, Juerong; Litvinenko, K. L.; Murdin, B. N.; Erfani, Morteza; Matmon, Guy; Aeppli, G.; Ortéga, J.M.; Prazérès, R.; Li, Dong; Yu, Xiaomei

doi:10.1063/1.4890526

Cited by 9 publications

(15 citation statements)

References 33 publications

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“…A major difference is that electrical detection, as used here, is sensitive to recombination, thus focusing attention on the effective recombination rate coefficient P . Here we find found by Bowyer et al [7]. It should be noted that the sample used here is similar to those considered by Brown and Rodriguez and Norton et al, but very different from the metal oxide semiconductor field effect transistor (MOSFET) used by Bowyer et al Recombination is a complex cascade process and the effective recombination rate coefficient will depend at least on temperature, donor density, trap density (which will vary strongly between bulk silicon and MOSFETs), and sample phonon spectrum, so the difference between our value and that in Ref.…”

Section: Discussionsupporting

confidence: 77%

“…It should be noted that the sample used here is similar to those considered by Brown and Rodriguez and Norton et al, but very different from the metal oxide semiconductor field effect transistor (MOSFET) used by Bowyer et al Recombination is a complex cascade process and the effective recombination rate coefficient will depend at least on temperature, donor density, trap density (which will vary strongly between bulk silicon and MOSFETs), and sample phonon spectrum, so the difference between our value and that in Ref. [7] is not surprising. In summary, the important conclusion is that techniques which have been successfully applied to the modeling of quantum information processing in trapped ions and atoms [30] can, with little modification, also be used to model similar processes in donors in Si.…”

Section: Discussionmentioning

confidence: 97%

“…Very recently we have demonstrated the coherent creation and destruction, via Ramsey interference of picosecond pulse pairs, of orbital wave packets in Si:P with both optical and electrical read-out [4]. The electrical detection mechanism, termed photothermal ionization spectroscopy, is based on the much higher thermal ionization probability for an excited 2p ± state than the ground 1s state, implying that at finite temperature the sample conductivity directly reflects the strength of the 1s to 2p ± orbital transitions [4][5][6][7]. Electrical detection of orbital excitation is by orders of magnitude more sensitive than the optical technique (see also Refs.…”

Section: Introductionmentioning

confidence: 99%

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Quantitative analysis of electrically detected Ramsey fringes in P-doped Si

et al. 2015

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This work describes detection of the laser preparation and subsequent coherent manipulation of the quantum states of orbital levels of donors in doped Si, by measuring the voltage drop across an irradiated Si sample. This electrical signal, which arises from thermal ionization of excited orbital states, and which is detected on a millisecond time scale by a voltmeter, leads to much more sensitive detection than can be had using optical methods, but has not before been quantitatively described from first principles. We present here a unified theory which relates the voltage drop across the sample to the wave function of the excited donors, and compare its predictions to experiments in which pairs of picosecond pulses from the Dutch free-electron laser FELIX are used to resonantly and coherently excite P donors in Si. Although the voltage drop varies on a millisecond time scale we are able to measure Ramsey oscillation of the excitation on a picosecond time scale, thus confirming that the donor wave function, and not just its excited state population, is crucial in determining the electrical signal. We are also able to extract the recombination rate coefficient to the ground state of the donor as well as the photoionization cross section of the excited state and phonon induced thermal ionization rate from the excited state. These quantities, which were previously of limited interest, are here shown to be important in the description of electrical detection, which, in our unoptimized configuration, is sensitive enough to enable us to detect the excitation of ∼10 7 donors.

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Section: Discussionsupporting

confidence: 77%

Section: Discussionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

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Quantitative analysis of electrically detected Ramsey fringes in P-doped Si

et al. 2015

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“…T 1 describes the longitudinal relaxation, while T 2 and T * 2 describe transverse relaxation. It is typical to use incoherent readout of the incoherent decay [1,9,10] and coherent readout of the coherent decay [7,8], but it is also possible to utilize coherent readout of incoherent dynamics, as in the example of echo detection of T 1 [8], and incoherent readout of coherent dynamics, as in electrical detection of Ramsey interference [8,12]. In the latter the electrical signal arises from thermal ionization of excited orbital states, and it measures the excited state population.…”

Section: Introductionmentioning

confidence: 99%

“…THz-pumped orbital excitations of silicon impurities have been controlled and detected both incoherently and coherently to provide various dynamical time scales T 1 [1,8,9] (including the ionized donor recombination rate [10] and the interdonor tunneling rate [11]), T 2 [7], and T * 2 [8,12]. The Bloch sphere simply maps the population (given by the longitudinal, z component of the Bloch vector) and polarization (given by the transverse, x-y component).…”

Section: Introductionmentioning

confidence: 99%

Weak probe readout of coherent impurity orbital superpositions in silicon

et al. 2016

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Pump-probe spectroscopy is the most common time-resolved technique for investigation of electronic dynamics, and the results provide the incoherent population decay time T 1 . Here we use a modified pump-probe experiment to investigate coherent dynamics, and we demonstrate this with a measurement of the inhomogeneous dephasing time T * 2 for phosphorus impurities in silicon. The pulse sequence produces the same information as previous coherent all-optical (photon-echo-based) techniques but is simpler. The probe signal strength is first order in the pulse area but its effect on the target state is only second order, meaning that it does not demolish the quantum information. We propose simple extensions to the technique to measure the homogeneous dephasing time T 2 , or to perform tomography of the target qubit.

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Coherent creation and destruction of orbital wavepackets in Si:P with electrical and optical read-out

et al. 2015

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The ability to control dynamics of quantum states by optical interference, and subsequent electrical read-out, is crucial for solid state quantum technologies. Ramsey interference has been successfully observed for spins in silicon and nitrogen vacancy centres in diamond, and for orbital motion in InAs quantum dots. Here we demonstrate terahertz optical excitation, manipulation and destruction via Ramsey interference of orbital wavepackets in Si:P with electrical read-out. We show milliradian control over the wavefunction phase for the two-level system formed by the 1s and 2p states. The results have been verified by all-optical echo detection methods, sensitive only to coherent excitations in the sample. The experiments open a route to exploitation of donors in silicon for atom trap physics, with concomitant potential for quantum computing schemes, which rely on orbital superpositions to, for example, gate the magnetic exchange interactions between impurities.

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Picosecond dynamics of a silicon donor based terahertz detector device

Cited by 9 publications

References 33 publications

Quantitative analysis of electrically detected Ramsey fringes in P-doped Si

Quantitative analysis of electrically detected Ramsey fringes in P-doped Si

Weak probe readout of coherent impurity orbital superpositions in silicon

Coherent creation and destruction of orbital wavepackets in Si:P with electrical and optical read-out

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