Picoampere Dark Current and Electro‐Opto‐Coupled Sub‐to‐Super‐linear Response from Mott‐Transition Enabled Infrared Photodetector for Near‐Sensor Vision Processing

Abstract

Light‐intensity selective superlinear photodetectors with ultralow dark current can provide an essential breakthrough for the development of high‐performing near‐sensor vision processing. However, the development of near‐sensor vision processing is not only conceptually important for device operation (given that sensors naturally exhibit linear/sublinear responses), but also essential to get rid of the massive amount of data generated during object sensing and classification with noisy inputs. Therefore, achieving the giant superlinear photoresponse while maintaining the picoampere leakage current, irrespective of the measurement bias, is one of the most challenging tasks. Here, Mott material (vanadium dioxide) and silicon‐based integrated infrared photodetectors are developed that show giant superlinear photoresponse (exponent >18) and ultralow dark current of 4.46 pA. Specifically, the device demonstrates an electro‐opto‐coupled insulator‐to‐metal transition, which leads to outstanding photocurrent on/off ratio (>106), a high responsivity (>1 mA W−1), and excellent detectivity (>1012 Jones), while maintaining response speed (τr = 6 µs and τf = 10 µs). Further, intensity‐selective near‐sensor processing is demonstrated and night vision pattern reorganization even with noisy inputs is exhibited. This research will pave the way for the creation of high‐performance photodetectors with potential uses, such as in night vision, pattern recognition, and neuromorphic processing.

Reconfigurable Polarized Photodetector with Centrosymmetric Silicon Enabled by Flexoelectric Effect for Encrypted Communication

“…As expected, I p changes notably when changing a small, applied force from 720 to 660 mN, even without any change in 𝜃 or illuminating intensity, indicating a dynamic and controllable response. Further, the rise time (𝜏 r , i.e., the time taken for I p to increase from 10% to 90% of its maximum value) and fall time (𝜏 f , i.e., the time taken for I p to decay from 90% to 10%) [27][28][29][30] are found to be 1.4 ms and 840 μs, respectively, as shown in Figure 3f. It is interesting to note that both rise and fall times do not depend significantly on the applied force, which indicates that I p generation is an intrinsic material property rather than solely the flexoelectric effect.…”

WS2–Polyaniline Nanohybrid Materials for High-External Quantum Efficiency Photoelectric Devices Utilized in Flexible Electronics

“…The photocurrent ( I p ) to dark current ( I d ) ratio of the photodetector is known as the on/off ratio. A high on/off ratio suggests the photodetector can effectively separate the signal (photocurrent) from the noise (dark current) . According to the statistics, the on/off ratio of the WS 2 photodetector device is 3.41 to 7.04 when increasing illumination intensity, as shown in Table S1.…”

“…A high on/off ratio suggests the photodetector can effectively separate the signal (photocurrent) from the noise (dark current). 70 According to the statistics, the on/off ratio of the WS 2 photodetector device is 3.41 to 7.04 when increasing illumination intensity, as shown in Table S1. The on/off ratio of the WS 2 −PANI photodetector device on paper increases from 52.55 to 89.34 when the light intensity increases from 50 to 375 μWcm −2 (Figure 6e).…”

Optimizing the Charge Carrier Dynamics of Thermal Evaporated TexSe1‐x Films for High‐Performance Short‐Wavelength Infrared Photodetection

“…Short-wavelength infrared (SWIR) photodetectors are crucial in industry and our daily life, such as night vision, remote sensing, molecular chemistry, optical communication, medical applications, safety monitory, and environmental surveillance. [1][2][3][4][5][6][7] Current SWIR photo-sensing materials are mainly dominated by germanium (Ge), indium gallium arsenide (InGaAs), indium antimonide (InSb), and mercury cadmium telluride (MCT), etc. [8][9][10][11] However, commercial SWIR photodetectors based these semiconductor materials are associated with a high production cost due to complex fabrication techniques, such as molecular beam epitaxy (MBE), Liquid phase epitaxy (LPE), and Metal-organic DOI: 10.1002/adfm.202307005 chemical vapor deposition (MOCVD).…”