WS₂–Polyaniline Nanohybrid Materials for High-External Quantum Efficiency Photoelectric Devices Utilized in Flexible Electronics

Abstract

We were demonstrated high-external quantum efficient WS 2 − polyaniline (WS 2 −PANI) based photoelectric devices fabricated on cost-effective and environment friendly flexible substrates. Here, the WS 2 −PANI nanohybrid photodetector devices were prepared by using the solution processed method on the cellulose paper and polyethylene terephthalate (PET). The exceptional sensitivity of the WS 2 −PANI nanohybrid photodetector device was shown by its maximum responsivity of 93.91 AW −1 , EQE of 3.18 × 10 4 %, and maximum detectivity of 1.74 × 10 13 Jones at 50 μWcm −2 on the cellulose paper, while maximum responsivity were found to be 112.47 AW −1 and EQE of 3.81 × 10 4 % at 50 μWcm −2 on the PET substrate. The effectiveness of the WS 2 −PANI nanohybrid photodetector device was briefly assessed under various light intensities and bending radii. Furthermore, it was discovered that the performance of the WS 2 − PANI nanohybrid photodetector device was stable under different bending radii of curvature, which further increased its applicability for usage in flexible electronics. Lower bending radii of curvature did not affect the photocurrent or on/off ratio, demonstrating the device's adaptability and durability of the photoelectric devices. The external quantum efficiency (EQE) of the WS 2 −PANI photodetector device on PET substrate was found to be 3.81 × 10 4 % at 50 μWcm −2 and reduced up to 9.73 × 10 3 % at 375 μWcm −2 . Overall, the flexible PET substrate fabricated WS 2 −PANI based photodetector device shows encouraging performance characteristics and could be a possible contender for flexible and wearable electronics.

The heterostructure topology of a chemiresistive sensor based on hexagonal BaTiO3 and 2D SnO for toluene detection

“…3–6 Because of their wide range of applications, these sensors have attracted the interest of the scientific community. 7 For achieving the excellent performance of the E-noses, researchers are focusing on the design and fabrication of new sensing materials. 5,6…”

“…26,28–31 Under such conditions, the connection between the core and semiconducting HAL governs the conduction. 7,24 Here, it is crucial to note that the different conduction configurations are responsible for the variation of the sensor's resistance. For identical morphologies, the response of the n-type MOSs is determined to be the square of the response of p-type MOSs.…”