Physics-Based Multi-Bias RF Large-Signal GaN HEMT Modeling and Parameter Extraction Flow

Ahsan, Sheikh Aamir; Ghosh, Sudip; Khandelwal, Sourabh; Chauhan, Yogesh Singh

doi:10.1109/jeds.2017.2724839

Cited by 70 publications

(28 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…discontinuity points or counter-clockwise motion) was often reported leading to diverse interpretations. In active devices (transistors), as for example in 15,16 it is referred as “kink-phenomenon”, in lossless (purely reactive) non-Foster circuits (such as negative capacitors and inductors) 17–20 , as an intrinsic phenomenon. Unfortunately, this counter-clockwise dynamics phenomenon recurrent existence in lossy circuits with non-Foster elements 19,21–24 , led to some misleading conclusions: in 21–24 the authors assume that the existence of this phenomenon proves the presence of a non-Foster element, while in 25 it is stated that passive linear devices cannot exhibit driving point immittances with counter-clockwise frequency dependency on the Smith chart.…”

Section: Introductionmentioning

confidence: 99%

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

Müller

Moldoveanu

Asavei

et al. 2019

Sci Rep

View full text Add to dashboard Cite

Recently, the field of Metal-Insulator-Transition (MIT) materials has emerged as an unconventional solution for novel energy efficient electronic functions, such as steep slope subthermionic switches, neuromorphic hardware, reconfigurable radiofrequency functions, new types of sensors, terahertz and optoelectronic devices. Employing radiofrequency (RF) electronic circuits with a MIT material like vanadium Dioxide, VO2, requires appropriate characterization tools and fabrication processes. In this work, we develop and use 3D Smith charts for devices and circuits having complex frequency dependences, like the ones resulting using MIT materials. The novel foundation of a 3D Smith chart involves here the geometrical fundamental notions of oriented curvature and variable homothety in order to clarify first theoretical inconsistencies in Foster and Non Foster circuits, where the driving point impedances exhibit mixed clockwise and counter-clockwise frequency dependent (oriented) paths on the Smith chart as frequency increases. We show here the unique visualization capability of a 3D Smith chart, which allows to quantify orientation over variable frequency. The new 3D Smith chart is applied as a joint complex-scalar 3D multi-parameter modelling and characterization environment for reconfigurable RF design exploiting Metal-Insulator-Transition (MIT) materials. We report fabricated inductors with record quality factors using VO2 phase transition to program multiple tuning states, operating in the range 4 GHz to 10 GHz.

show abstract

Section: Introductionmentioning

confidence: 99%

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

Müller

Moldoveanu

Asavei

et al. 2019

Sci Rep

View full text Add to dashboard Cite

show abstract

“…Non-linear components of the unit GaN-HEMT included the gate-source capacitor (C gs ), gate-drain capacitor (C gd ), and drain-source capacitor (C ds ) [9,12,20]. Each component was extracted based on the measured S-parameter of a wide operation range, and based on the extracted data, the nonlinear capacitors were empirically modeled using continuous and differentiable functions [9][10][11][12][13][14][15]. The modeled non-linear components are expressed as follows:…”

Section: Modeling the Non-linear Capacitorsmentioning

confidence: 99%

“…In [12], a channel current considering the device physics was proposed. Most of the previous transistor models with various output power capacities are directly based on the measured results for the transistor itself [12][13][14][15][16]. However, in the case of transistors with a high output power capacity, it is very difficult to obtain an accurate large-signal model directly.…”

Section: Introductionmentioning

confidence: 99%

Scaled GaN-HEMT Large-Signal Model Based on EM Simulation

Lee

Kang

Choi³

et al. 2020

Electronics

View full text Add to dashboard Cite

This paper presents a scaled GaN-HEMT large-signal model based on EM simulation. A large-signal model of the 10-finger GaN-HEMT consists of a large-signal model of the two-finger GaN-HEMT and an equivalent circuit of the interconnection circuit. The equivalent circuit of the interconnection circuit was extracted according to the EM simulation results. The large-signal model for the two-finger device is based on the conventional Angelov channel current model. The large-signal model for the 10-finger device was verified through load-pull measurement. The 10-finger GaN-HEMT produced an output power of about 20 W for both simulation and load-pull measurements.

show abstract

“…The small-signal lumped-element equivalent-circuit modeling of microwave transistors has been much debated and is still being debated [1][2][3][4][5][6][7][8], since this area of research is of great interest but also very challenging. The large interest comes mostly from the fact that the small-signal lumpedelement equivalent-circuit models often act as foundation for large-signal and noise modeling [9][10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation

Jarndal

Crupi

Raffo

et al. 2021

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

In this paper, a new modeling technique is proposed for extracting small-signal lumped-element equivalent-circuit models for microwave transistors. The proposed procedure is based on using an optimization approach that is improved by targeting a quasi-static behavior as additional objective function rather than only minimizing the error between the simulated and measured scattering parameters. The validity of the developed modeling methodology is successfully demonstrated by considering a 0.25x1000 m 2 gallium nitride (GaN) highelectron-mobility transistor (HEMT) as a case study.

show abstract

Physics-Based Multi-Bias RF Large-Signal GaN HEMT Modeling and Parameter Extraction Flow

Cited by 70 publications

References 33 publications

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

Scaled GaN-HEMT Large-Signal Model Based on EM Simulation

An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation

Contact Info

Product

Resources

About