Physics and applications of Si/SiGe/Si resonant interband tunneling diodes

Boron Delta-Doping Dependence on Si/SiGe Resonant Interband Tunneling Diodes Grown by Chemical Vapor Deposition

“…However, SiGe is limited by its critical thickness, and a composite SiGe/Si tunneling barrier has to be employed. The highest reported PVCR obtained for Si/SiGe RITDs is 6 with a current density of 1.5 kA/cm 2 using a 3-nm Si 0.54 Ge 0.46 /1-nm Si barrier [16]. A pure Si RITD, avoiding the complexity of Ge incorporation, resulted in a PVCR of 2.05 [17].…”

Resonance Tunneling Diode Structures on CdTe Nanowires Made by Conductive AFM

“…Since the first report about such device in 1958, 28 the Esaki diode has attracted great attention due to its negative differential resistance with potential applications in a variety of electronic circuits. 29 Our new technique opens the door to the fabrication of nanoscale resonance tunneling diodes (RTD), one of the most interesting devices in the area of nanoelectronics. As one can see from Figure 3C, the energy profile for a conduction band along the NW is identical to the so-called double barrier RTDs.…”

P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance

“…Discrete RITDs have been reported that have a peak-to-valley current ratio (PVCR) greater than 6 [1], peak current densities (PCD) greater than 218 kA/cm 2 [2], and voltage swings, V s , greater than 560 mV [3]. All of these devices have features in common: 1) the electron tunnelling occurs between bound states in the valence band and the conduction band created by highlydoped layers formed by d-doping; 2) a spacer layer between the two d-doped layers which includes Si 1-x Ge x to reduce the bandgap and reduce the out-diffusion of dopants from the B d-doped layer; 3) epitaxial growth at low temperature to reduce both the diffusion of dopants and the segregation of constituents during the growth; and 4) a post-growth anneal to reduce the effect of point defects which occur due to the low temperature epitaxial growth.In particular, room temperature RITD performance has been shown to be sensitive to Ge concentration [4], the width of the spacer layer [5] and to the temperature of the post-growth anneal [1,3,4]. In spite of the narrow process windows, SiGe RITDs have been successfully integrated with both complementary metal oxide semiconductor (CMOS) transistors [6] and heterojunction bipolar transistors (HBT) [7] to form elementary logic circuits.…”

“…Considerable progress has been made in the area of Si-based resonant interband tunnel diodes (RITDs). Discrete RITDs have been reported that have a peak-to-valley current ratio (PVCR) greater than 6 [1], peak current densities (PCD) greater than 218 kA/cm 2 [2], and voltage swings, V s , greater than 560 mV [3]. All of these devices have features in common: 1) the electron tunnelling occurs between bound states in the valence band and the conduction band created by highlydoped layers formed by d-doping; 2) a spacer layer between the two d-doped layers which includes Si 1-x Ge x to reduce the bandgap and reduce the out-diffusion of dopants from the B d-doped layer; 3) epitaxial growth at low temperature to reduce both the diffusion of dopants and the segregation of constituents during the growth; and 4) a post-growth anneal to reduce the effect of point defects which occur due to the low temperature epitaxial growth.…”

“…In particular, room temperature RITD performance has been shown to be sensitive to Ge concentration [4], the width of the spacer layer [5] and to the temperature of the post-growth anneal [1,3,4]. In spite of the narrow process windows, SiGe RITDs have been successfully integrated with both complementary metal oxide semiconductor (CMOS) transistors [6] and heterojunction bipolar transistors (HBT) [7] to form elementary logic circuits.…”