Physicochemical, optical properties and stability against crystallization of GaxGey-xS100-y (x=0–8; y = 40–42) glasses

Velmuzhov, А.P.; Суханов, М. В.; Tyurina, E.A.; Plekhovich, А.D.; Fadeeva, D.А.; Ketkova, L.А.; Чурбанов, М. Ф.; Shiryaev, V.S.

doi:10.1016/j.jnoncrysol.2020.120615

Cited by 7 publications

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“…四面体结构的振动，两个 GeS 4 四面体通过桥连接一个 S 原子形成的 S 3 Ge-S-GeS 3 结构的振动峰出现在 432 cm -1 附近，S n 短链或环上 S-S 键的对称拉伸振动导致 482 cm -1 处的拉曼振动峰的形成 [24][25][26][27][28] 。将 Ga 原子引入二元体系 Ge-S 玻璃结构内，其拉曼散射光谱也发生了变化。出现在 331 cm -1 的振动峰归属于 Ge/GaS 4 (v 2 )结构单元的对称伸缩模式，位于 390 cm -1 附近的振动峰是由 GaS 4 (F 2 )结构单元中的 Ga-S 异极键振动造成 [29,30] 。除此之外，在 232 cm -1 附近出现的新拉曼振动峰与类乙烷结构单元 S 3 Ge/Ga-Ga/GeS 3 的振动有关 [29,31] Ga-Ga 或 Ge-Ga) [32,33] 。表2 Ge x Ga 8 S 92-x 玻璃的Ge 3d，Ga 3d 和S 2p 的XPS的拟合参数 Table 2. The fitting parameters for the decomposed Ge 3d, Ga 3d and S 2p spectra of Ge x Ga 8 S 92-x glasses.…”

Section: 结果与讨论unclassified

Structure of GexGa8S92–x glasses studied by high-resolution X-ray photoelectron spectroscopy and Raman scattering

Si-Wei¹,

Wang²,

Shen³

2023

Acta Phys. Sin.

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In this paper, the structure of chalcogenide glasses GexGa8S92-x (x=24%, 26.67%, 29.6%, 32% and 36%) at a fixed Ga atomic content of 8% has been studied by high-resolution X-ray photoelectron spectroscopy and Raman scattering spectra. In order to quantify the evolution of the different structural units in GexGa8S92-x glasses, the number of double peaks in the Ge 3d, Ga 3d and S 2p spectra were determined by iterative fitting method, their binding energy and the full width at half maximum of each peak, and the relative ratio of the integral area of each decomposed peak to that of the whole area of the X-ray photoelectron spectroscopy were thus achieved. On the other hand, Raman scattering spectra of GexGa8S92-x glass were decomposed into multiple Gaussians based on the structural units. We used iterative method to simulate the position of peak center, full width at half maximum, and height of each Raman peak. By analyzing the evolution of each unit structure in the glasses, it was found that the network structure of glass network is mainly formed by S atom bridging the tetrahedral structure of GeS4and GaS4. The S chains or rings structural units are formed in Ge24Ga8S68 glass, indicating that S atoms are in excess in the chemical composition of the glass, so there are enough S atoms around Ge and Ga atoms, forming heteropolar Ge-S and Ga-S bonds. With the gradual increase of Ge content, S chains or rings structure units rapidly disappear in Ge26.67Ga8S65.33 glass. The Ge-Ge homopolar bonds in the ethane-like structure S3Ge-GeS3 and the M-M (Ge-Ge, Ga-Ga or Ge-Ga) homopolar bonds in the S3Ge/Ga-Ga/GeS3 structure simultaneous appear in the Ge29.6Ga8S62.4 glass, and the number of structures increased gradually with the increase of Ge content. This is mainly due to the insufficient content of S atoms in the Ge-Ga-S glasses. Once S atoms are lacking, the excess Ge and Ga atoms can only combine with themselves to form the homopolar bond M-M. It can be concluded that, firstly, Ge and Ga atoms appear mainly in the form of 4 coordination, while S atoms appear mainly in the form of 2 coordination in the chalcogenide glasses of GexGa8S92-x. Secondly, the existence of M-M bond leads to the separation of nanophase, and the ordering degree of glass network structure is reduced.

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