Physically Unclonable Functions With Voltage-Controlled Magnetic Tunnel Junctions

Tanaka, Yuji; Goto, Minori; Shukla, Aditya; Yoshikawa, Kohei; Nomura, Hiroyasu; Miwa, Shinji; Tomishima, Shigeki; Suzuki, Y.

doi:10.1109/tmag.2020.3042715

Cited by 6 publications

(8 citation statements)

References 18 publications

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“…[ 164,165 ] PUFs are becoming increasingly important in addressing security challenges related to device‐level authentication of electronic systems. Figure shows the schematic illustration of a VCMA‐based PUF proposed by Tanaka et al , [166 . ] where the vertical axis represents the magnetic energy and the red arrows represent the direction of the magnetization of the free layer.…”

Section: Vcma‐mram Devices For Security Applicationsmentioning

confidence: 99%

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Progress and Application Perspectives of Voltage‐Controlled Magnetic Tunnel Junctions

Shao,

Khalili Amiri

2023

Adv Materials Technologies

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This article discusses the current state of development, open research opportunities, and application perspectives of electric‐field‐controlled magnetic tunnel junctions that use the voltage‐controlled magnetic anisotropy effect to control their magnetization. The integration of embedded magnetic random‐access memory (MRAM) into mainstream semiconductor foundry manufacturing opens new possibilities for the development of energy‐efficient, high‐performance, and intelligent computing systems. The current generation of MRAM, which uses the current‐controlled spin‐transfer torque (STT) effect to write information, has gained traction due to its nonvolatile data retention and lower integration cost compared to embedded Flash. However, scaling MRAM to high bit densities will likely require a transition from current‐controlled to voltage‐controlled operation. In this perspective, an overview of voltage‐controlled magnetic anisotropy (VCMA) as a promising beyond‐STT write mechanism for MRAM devices is provided and recent advancements in developing VCMA‐MRAM devices with perpendicular magnetization are highlighted. Starting from the fundamental mechanisms, the key remaining challenges of VCMA‐MRAM, such as increasing the VCMA coefficient, controlling the write error rate, and achieving field‐free VCMA switching are discussed. Then potential solutions are discussed and open research questions are highlighted. Lastly, prospective applications of voltage‐controlled magnetic tunnel junctions (VC‐MTJs) in security applications, extending beyond their traditional role as memory devices are explored.

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Section: Vcma‐mram Devices For Security Applicationsmentioning

confidence: 99%

Section: Vcma‐mram Devices For Security Applicationsmentioning

confidence: 99%

Progress and Application Perspectives of Voltage‐Controlled Magnetic Tunnel Junctions

Shao,

Khalili Amiri

2023

Adv Materials Technologies

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“…7 depicts PUF performance metrics and a general approach. Several performance metrics for PUF characterization have been done previously [38], [39] and Machine Learning-based attack resilient PUFs using STT-MTJ are reported in [40]. The general approach for evaluating emerging PUF characteristics remains the same as for CMOS-based PUFs, which is briefly presented in this section.…”

Section: Puf Performance Metrics and General Approachmentioning

confidence: 99%

Physically Unclonable Function Using GSHE Driven SOT Assisted p-MTJ for Next Generation Hardware Security Applications

et al. 2022

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The increasing threat of security attacks on hardware security applications has driven research towards exploring beyond CMOS devices as an alternative. Spintronic devices offer advantages like low power, non-volatility, inherent spatial and temporal randomness, simplicity of integration with a silicon substrate, etc., making them a potential candidate for next-generation hardware security systems. In this work, we explore the Giant Spin Hall effect (GSHE) driven spin-orbit torque magnetic tunnel junction (MTJ) implementing physically unclonable function (PUFs). The effect of process variation is considered in key MTJ parameters like TMR ratio, free and oxide layer thickness following Gaussian distribution, and Monte-Carlo simulations to determine the effect of the process variations. A unique challenge-response (C-R) pair is obtained utilizing the inherent variations in magnetization dynamics of the free layer due to process variations.INDEX TERMS Giant spin Hall Effect (GSHE), hardware security, magnetic tunnel junction (MTJ), physical unclonable functions (PUFs), spintronic, spin-orbit torque (SOT).

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“…Spintronic devices provide a promising solution due to their abundant entropy, electrical reconfigurability, nonvolatility, intrinsic radiation hardness, and reliable magneto-resistive (MR) readout, while being directly manufacturable on existing CMOS platforms. Previously proposed PUF designs based on spintransfer torque magnetic random-access memory (STT-MRAM), however, have not fully utilized the potential of spintronic PUFs: They were still primarily dependent on manufacturing variations, [23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41] and thus were not reconfigurable. In addition, they suffered from the well-known read-disturb challenge of resistive memories, [42][43][44][45] which reduces the CRP reliability if frequently used.…”

Section: Introductionmentioning

confidence: 99%

“…A PUF based on voltage‐controlled magnetic anisotropy (VCMA) has also been recently proposed. [ 40 ] However, it used in‐plane magnetic tunnel junctions (MTJs) which are not the industry standard for MRAM manufacturing, and as with the SOT‐based PUFs mentioned before, was based on large devices with micrometer‐scale dimensions.…”

Section: Introductionmentioning

confidence: 99%

Reconfigurable Physically Unclonable Functions Based on Nanoscale Voltage‐Controlled Magnetic Tunnel Junctions

Shao

Dávila

Ebrahimi³

et al. 2023

Adv Elect Materials

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With the fast growth of the number of electronic devices on the internet of things (IoT), hardware-based security primitives such as physically unclonable functions (PUFs) have emerged to overcome the shortcomings of conventional software-based cryptographic technology. Existing PUFs exploit manufacturing process variations in a semiconductor foundry technology. This results in a static challenge-response behavior, which can present a long-term security risk. This study shows a reconfigurable PUF based on nanoscale magnetic tunnel junction (MTJ) arrays that uses stochastic dynamics induced by voltage-controlled magnetic anisotropy (VCMA) for true random bit generation. A total of 100 PUF instances are implemented using 10 ns voltage pulses on a single chip with a 10 × 10 MTJ array. The unipolar nature of the VCMA mechanism is exploited to stabilize the MTJ state and eliminate bit errors during readout. All PUF instances show entropy close to one, inter-Hamming distance close to 50%, and no bit errors in 10 4 repeated readout measurements.

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Physically Unclonable Functions With Voltage-Controlled Magnetic Tunnel Junctions

Cited by 6 publications

References 18 publications

Progress and Application Perspectives of Voltage‐Controlled Magnetic Tunnel Junctions

Progress and Application Perspectives of Voltage‐Controlled Magnetic Tunnel Junctions

Physically Unclonable Function Using GSHE Driven SOT Assisted p-MTJ for Next Generation Hardware Security Applications

Reconfigurable Physically Unclonable Functions Based on Nanoscale Voltage‐Controlled Magnetic Tunnel Junctions

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