Magnetic random-access memory (MRAM) based on voltage-controlled magnetic anisotropy in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance computing applications, due to its lower power consumption, higher bit density, and the ability to reduce the access transistor size when compared to conventional current-controlled spin-transfer torque MRAM. The key to realizing these advantages is to have a low MTJ switching voltage. Here, we report a perpendicular MTJ structure with a high voltage-controlled magnetic anisotropy coefficient ~130 fJ/Vm and high tunnel magnetoresistance exceeding 150%. Owing to the high voltage-controlled magnetic anisotropy coefficient, we demonstrate sub-nanosecond precessional switching of nanoscale MTJs with diameters of 50 and 70 nm, using a voltage lower than 1 V. We also show scaling of this switching mechanism down to 30 nm MTJs, with voltages close to 2 V. The results pave the path for the future development and application of voltage-controlled MRAMs and spintronic devices in emerging computing systems.
The emergence of embedded magnetic random-access memory (MRAM) and its integration in mainstream semiconductor manufacturing technology have created an unprecedented opportunity for engineering computing systems with improved performance, energy efficiency, lower cost, and unconventional computing capabilities. While the initial interest in the existing generation of MRAM—which is based on the spin-transfer torque (STT) effect in ferromagnetic tunnel junctions—was driven by its nonvolatile data retention and lower cost of integration compared to embedded Flash (eFlash), the focus of MRAM research and development efforts is increasingly shifting toward alternative write mechanisms (beyond STT) and new materials (beyond ferromagnets) in recent years. This has been driven by the need for better speed vs density and speed vs endurance trade-offs to make MRAM applicable to a wider range of memory markets, as well as to utilize the potential of MRAM in various unconventional computing architectures that utilize the physics of nanoscale magnets. In this Perspective, we offer an overview of spin–orbit torque (SOT) as one of these beyond-STT write mechanisms for the MRAM devices. We discuss, specifically, the progress in developing SOT-MRAM devices with perpendicular magnetization. Starting from basic symmetry considerations, we discuss the requirement for an in-plane bias magnetic field which has hindered progress in developing practical SOT-MRAM devices. We then discuss several approaches based on structural, magnetic, and chiral symmetry-breaking that have been explored to overcome this limitation and realize bias-field-free SOT-MRAM devices with perpendicular magnetization. We also review the corresponding material- and device-level challenges in each case. We then present a perspective of the potential of these devices for computing and security applications beyond their use in the conventional memory hierarchy.
Ferrimagnets are considered an excellent spintronic material candidate which combines ultrafast magnetic dynamics and straightforward electrical detectability. However, efficient routes toward magneto-ionic control of ferrimagnetic order remain elusive. In this study, a solid-state oxygen gating device was designed to control the magnetic properties of the ferrimagnetic CoTb alloy. Experimental results show that applying a small voltage can irreversibly tune a Tb-dominant device to a stable Codominant state and decrease the magnetization compensation temperature by 130 K. In addition, a reversible voltage control of the magnetization axis between out-of-plane and in-plane states is observed, which indicates that the migrated oxygen ions can bond to both Tb and Co sublattices. First-principles calculations indicate that voltage can dynamically control the flow-in and flow-out of oxygen ions that bond to the Co sublattice. Our work provides an effective means to manipulate ferrimagnetic order and contributes to the development of ultra-low-power spintronic devices.
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