Physical Vapor Deposition Features of Ultrathin Nanocrystals of Bi₂(Te_xSe_1–x)₃

Abstract

Structural and electronic properties of ultrathin nanocrystals of chalcogenide Bi2(Te x Se1–x )3 were studied. The nanocrystals were formed from the parent compound Bi2Te2Se on as-grown and thermally oxidized Si(100) substrates using Ar-assisted physical vapor deposition, resulting in well-faceted single crystals several quintuple layers thick and a few hundreds nanometers large. The chemical composition and structure of the nanocrystals were analyzed by energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, electron backscattering, and X-ray diffraction. The electron transport through nanocrystals connected to superconducting Nb electrodes demonstrated Josephson behavior, with the predominance of the topological channels [38Commun. Mater.20201]. The present paper focuses on the effect of the growth conditions on the morphology, structural, and electronic properties of nanocrystals.

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