Physical understanding and optimum design of high-power millimeter-wave pulsed IMPATT diodes

Rolland, P.A.; Dalle, C.; Friscourt, M.R.

doi:10.1109/55.79563

Cited by 17 publications

(4 citation statements)

References 6 publications

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“…On the theoretical side, several investigators have published explanations for high power generation from silicon [5][6][7] and GaAs [8] flat DDR IMPATTs at mm-wave frequencies. Of these, Dalle et al [5], Rolland et al [6] and Gaul and Classen [8] suggested that the phenomenon of high power generation was due to pin mode operation of the devices at high current densities. Chen et al [7], on the other hand, suggested that the high power generation might be due to TRAPATT mode operation of silicon DDRs.…”

Section: Introductionmentioning

confidence: 99%

Studies on pulsed mm-wave low - high - low silicon IMPATT diodes at high current density and dependence on structural parameters

Mazumder¹,

Roy²

1997

Semicond. Sci. Technol.

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Pulsed-mode high-power generation in silicon double drift region (DDR) IMPATT devices is briefly reviewed, and current work is presented on the structural parameter dependence of pulsed silicon IMPATTs designed for operation around 94 GHz at a current density of 100 kA cm −2 .Computer studies are presented on three DDR structures: (i) flat, (ii) SLHL, i.e. low-high-low structure with single bump on either side of the p-n junction, and (iii) DLHL, i.e. low-high-low structure with double bumps on either side of the p-n junction. The results indicate that the DLHL structures exhibit much higher negative conductance than the other structures.It is seen that the magnitude of the peak negative conductance of the DLHL DDR IMPATT devices decreases appreciably if low-high-low bumps are changed from rectangular to trapezoidal shape. It is also found that the heights of the second bumps produce little variation in the negative conductance of the DLHL device, although the second bumps play a vital role in containing the space-charge effect at high current densities. The heights of the first bumps close to the metallurgical junction, however, produce appreciable changes in the small-signal behaviour of the DLHL diodes. Further, it has been found that the width of the active region, if increased gradually, makes the DLHL diode a narrow band device operating near the avalanche resonance frequency. The effect of variation of bump width and bump location (from the optimized structure) on the high-frequency properties of the device has also been studied and the results are presented in the paper.

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Section: Introductionmentioning

confidence: 99%

Studies on pulsed mm-wave low - high - low silicon IMPATT diodes at high current density and dependence on structural parameters

Mazumder¹,

Roy²

1997

Semicond. Sci. Technol.

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“…We have also computed the expected rf output power and dc-to-rf conversion efficiency from each of the IMPATT diode structures according to equations ( 6) and (7). The related values at the designed frequency of 220 GHz are listed in table 3.…”

Section: Resultsmentioning

confidence: 99%

“…5.41×10 6 1.34×10 8 5.41×10 6 b p (V cm −1 ) 1.96×10 7 2.03×10 7 3.92×10 7 cross-area of the diode, V dc and I dc are the dc voltage and current, respectively.…”

Section: Materials Parameters and Simulation Methodsmentioning

confidence: 99%

“…In recent years, extensive research is being carried out for the development of THz sources and detectors. Impact-ionization-avalanche-transit-time (IMPATT) diode has already emerged as high-power, highefficiency solid-state sources for both microwave and millimeter-wave frequency range [5][6][7]. In order to improve IMPATT diodes performance, one approach is to choose advanced semiconductor materials which have high breakdown electric field and high carriers saturation drift velocity, another is to design special device structures to localize the avalanche zone.…”

Section: Introductionmentioning

confidence: 99%

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A new lattice-matched In_0.17Al_0.83N ∼ GaN based heterostructure IMPATT diode for terahertz application

Xiu-sheng¹,

Yang²,

Ma³

2019

Semicond. Sci. Technol.

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Simulation studies are made on the dc and microwave performance of a novel lattice-matched In 0.17 Al 0.83 N/GaN heterostructure impact avalanche transit time (IMPATT) diode designed at the low-end terahertz frequency of 220 GHz. The electric field, breakdown voltage, rf output power and the dc-to-rf conversion efficiency of the heterostructure IMPATT diodes are compared with the GaN homostructure IMPATT diode. The results show that, a more localized avalanche region width is obtained for the heterostructure IMPATT diodes. With value of 45 nm of the In 0.17 Al 0.83 N layer width, the heterostructure IMPATT diode gives the highest efficiency (15.4%) with moderate rf output power density (1.62 MW cm −2 ), and the lowest Q-factor (6.57) as compared to other heterostructure and homostructure IMPATT diodes.

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Transit Time Devices

Roy

1999

Wiley Encyclopedia of Electrical and Electronics Engineering

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The sections in this article are Impatt Diodes Impatt Structures and Doping Profiles Basic Principle of Generation of Microwaves in Impatt Diodes Small‐Signal Analysis Based on Analytical Approximation Computer Studies of the DC and Small‐Signal Properties of Impatt Diodes of any Doping Profile Small‐Signal Computer Analysis of Impatt Diodes Large‐Signal Analysis of Impatt Diodes DC‐to‐Microwave Conversion Efficiency Effect of Mobile Space Charge Double Avalanche Region Diode and Cancellation of Space Charge Effect Low–High–Low Diodes for Reduction of the Space Charge Effect and Constriction of the Avalanche Zone High‐Frequency Considerations Noise in Impatt Diodes Thermal Limitations and Heat Sink Millimeter‐Wave Impatt Diodes Pulsed Millimeter‐Wave Impatt Diode Frequency Chirp in Pulsed Impatt Oscillators GaAs and InP Impatt Diodes Heterojunction Impatt Diodes Control of Impatt Properties by Optical Illumination of the Active Area and by A Transverse Field in the Drift Region Trapatt Diode Baritt Diodes Acknowledgement

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Physical understanding and optimum design of high-power millimeter-wave pulsed IMPATT diodes

Cited by 17 publications

References 6 publications

Studies on pulsed mm-wave low - high - low silicon IMPATT diodes at high current density and dependence on structural parameters

Studies on pulsed mm-wave low - high - low silicon IMPATT diodes at high current density and dependence on structural parameters

A new lattice-matched In_0.17Al_0.83N ∼ GaN based heterostructure IMPATT diode for terahertz application

Transit Time Devices

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Physical understanding and optimum design of high-power millimeter-wave pulsed IMPATT diodes

Cited by 17 publications

References 6 publications

Studies on pulsed mm-wave low - high - low silicon IMPATT diodes at high current density and dependence on structural parameters

Studies on pulsed mm-wave low - high - low silicon IMPATT diodes at high current density and dependence on structural parameters

A new lattice-matched In0.17Al0.83N ∼ GaN based heterostructure IMPATT diode for terahertz application

Transit Time Devices

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Product

Resources

About

A new lattice-matched In_0.17Al_0.83N ∼ GaN based heterostructure IMPATT diode for terahertz application