2020
DOI: 10.1016/j.physleta.2019.126199
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Physical properties of Pb doped ZnS thin films prepared by ultrasonic spray technique

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Cited by 17 publications
(8 citation statements)
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“…The Urbach tail, with an associated Urbach energy, is responsible for the absorption tail produced by these localized defect states, which extends far into the band gap [66]. The Urbach energy was calculated from the absorption spectrum using the formulas below [73]:…”
Section: Physicochemical Characterization Of Bt Bt/co-e and Bt-co-p E...mentioning
confidence: 99%
“…The Urbach tail, with an associated Urbach energy, is responsible for the absorption tail produced by these localized defect states, which extends far into the band gap [66]. The Urbach energy was calculated from the absorption spectrum using the formulas below [73]:…”
Section: Physicochemical Characterization Of Bt Bt/co-e and Bt-co-p E...mentioning
confidence: 99%
“…For example, depending on the crystalline quality of the AlN substrate ZnO deposited films show an epitaxial growth [19,20]. Extensive studies have been reported on ZnS nanostructures doped with different transition metal ions (such as Co, Mn, Ni, Fe) prepared by different techniques [21][22][23][24]. Depending on the type of dopant ion, the doped materials exhibit different luminescent, electronic and magnetic properties.…”
Section: Fig 1 the Cubic Unit Cell Of Zinc Blende (A) And The Hexagmentioning
confidence: 99%
“…Changing the presence of dopant can change the composition of ZnS [11][12][13]. Impuritydoped ZnS has different properties than undoped ZnS.…”
Section: Introductionmentioning
confidence: 99%
“…Impuritydoped ZnS has different properties than undoped ZnS. Aluminum (Al), indium (In), chromium (Cr), gallium (Ga), fluorine (F), copper (Cu), chlorine (Cl), boron (B), and manganese (Mg) seem to be dopants that could be used to modify the features of ZnS [11][12][13][14][15]. AZS films have excellent properties among doped ZnS materials [13][14][15].…”
Section: Introductionmentioning
confidence: 99%