Physical properties of In2O3 thin films prepared at various oxygen partial pressures

Abstract

a b s t r a c tPolycrystalline cubic In 2 O 3 thin films were deposited on the normal glass substrates by activated reactive evaporation method and systematically investigated the influence of oxygen partial pressure on the structural, optical, electrical and photoluminescence properties of the films. X-ray diffraction studies revealed that the films formed at oxygen partial pressure of 2 × 10 −3 mbar were nearly stoichiometric. The films formed at an oxygen partial pressure of 2 × 10 −3 mbar exhibited the electrical resistivity of 8.2 × 10 −4 cm, optical transmittance of 87% and the optical band gap of 3.62 eV. Two distinct emission peaks in the photoluminescence spectrum were observed at 415 and 440 nm in the visible region of the solar spectrum.

Improved High-Performance Solution Processed In₂O₃ Thin Film Transistor Fabricated by Femtosecond Laser Pre-Annealing Process

“…In2O3-based TFTs are popular for high-resolution activematrix displays owing to its solution processing, which offers a scalable and cost-effective route for low-cost, equipment simplicity, high throughput, low material waste, and large-area deposition [3,22,23] compared to other deposition techniques, such as evaporation [24], sputtering [25], chemical vapor deposition [19,26], and atomic layer deposition [27,28]. In addition, the preparation of In2O3 thin films is entirely independent of 2methoxyethanol/acetonitrile-based liquid precursor solutions.…”

Study of structural and transport properties of nanostructured CeO2, Ce1−xRuxO2 and Ce1−xInxO2 thin films

“…In this context, the sensing properties of Ce 1− x M x O 2− δ (M = Ru, In) compounds are proposed to be studied for the first time, and are being compared with those ones mentioned for rare earth doped ceria and other simple oxides such as In 2 O 3 13, 31–37. Our hypothesis is that partial substitution of cerium by Ru or In to produce Ce 1− x Ru x O 2 and Ce 1− x In x O 2 solid solutions can lead to a defect‐like structure, increasing oxygen mobility, and additional electronic states which may be positive for their development as gas sensors.…”

Thickness and annealing effects on thermally evaporated InZnO thin films for gas sensors and blue, green and yellow emissive optical devices

“…5a,b. The SEM images revealed that the grains of as-deposited and annealed films are spherical in shape and are uniformly distributed over the entire film surface [60]. The size of the grain increases with increase of annealing temperature might be due to the increase in mobility of atoms [17,61].…”