Physical properties of erbium implanted tungsten oxide films deposited by reactive dual magnetron sputtering

Mohamed, S. H.; Anders, André

doi:10.1016/j.tsf.2006.12.179

Cited by 17 publications

(9 citation statements)

References 30 publications

(27 reference statements)

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“…Thus, the observed amorphization at higher plasma processing powers is related to the surface chemistry changes and to the ion bombardment effects. This effect is similar to that of ion implantation at low temperature [25].…”

Section: Structural Properties 311 Film Composition and Thicknesssupporting

confidence: 78%

Properties of Rf Plasma Nitrided Silicon Thin Films at Different Rf Plasma Processing Powers

et al. 2011

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Nitrided surfaces and composition gradients in thin films exhibit interesting mechanical, electrical and optical properties. Therefore, silicon (Si) thin films were prepared by electron beam evaporation and nitrided by an inductively coupled rf plasma. The effects of successive plasma processing power on structural and optical properties as well as electrical resistivity were examined by different characterization techniques. The Si thin films were transformed gradually into nitrides compound thin films and the amount of nitrogen in the film increased with increasing the rf processing power. The Si nitrided films showed structural, optical and electrical properties that depend on the nitriding power. Increasing the rf plasma processing power caused amorphization, reduced the thickness, increased transmittance, increased resistivity and decreased the reflectance of the Si films. The electrical resistivity increased about eight orders of magnitude when the sample nitrided at 500 W. Different optical band gap were determined indicating the presence of different competing phases in the same film. The decrease in refractive index with plasma treatment power is attributed to the possible change in the bucking density as well as to the increase in the band gap.

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Section: Structural Properties 311 Film Composition and Thicknesssupporting

confidence: 78%

Properties of Rf Plasma Nitrided Silicon Thin Films at Different Rf Plasma Processing Powers

et al. 2011

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“…Thus, the observed amorphization at higher plasma powers or times is related to the thickness reduction, the surface chemistry changes and to the ion bombardment effects. This effect is similar to that of ion implantation at low temperature [49].…”

Section: Film Temperature Thickness Composition and Structuresupporting

confidence: 78%

Effects of thickness and rf plasma oxidizing on structural and optical properties of SiOxNy thin films

Mohamed

Raaif

2010

Surface and Coatings Technology

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“…The experimentally determined values of n are in close agreement with the earlier reported values for WO 3 . 43 It is noted that the refractive index, n increases with Pd incorporation concentration. concentration.…”

Section: Resultsmentioning

confidence: 99%

“…Tungsten oxide is highly insulating as long as the material is stoichiometric. The reported values of resistivity of physical vapor deposited tungsten oxide films lie in the range of 10 1 -10 6 m. [44][45][46][47] Delamare et al, 48 have reported a low resistivity of 5 6 × 10 −3 m for the WO 3 nanorods grown on mica substrates. In the present study the resistivity values of the investigated films lie between 0.602 m to 17 m. The slight increase in resistivity observed for the 5 wt% Pd incorporated WO 3 film compared to that of 1 wt% Pd incorporated WO 3 film can be due to the grain boundary scattering induced by the incorporated Pd segregation as suggested from the Raman spectral data.…”

Section: Resultsmentioning

confidence: 99%

Micro-Structural, Electrical and Spectroscopic Investigations of Pulsed Laser Ablated Palladium Incorporated Nanostructured Tungsten Oxide Films

Lethy¹,

Beena²,

Pillai³

et al. 2009

j nanosci nanotechnol

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Pure and Pd incorporated (0.5, 1 and 5 wt%) WO3 films are prepared on quartz substrates using pulsed laser ablation (PLD) technique in an oxygen ambient of 0.12 mbar, at a substrate temperature (Ts) of 873 K. Palladium incorporation effects on the microstructure, optical and electrical properties of tungsten oxide films are systematically investigated using techniques like X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Energy dispersive X-ray spectroscopy (EDX), micro-Raman spectroscopy, UV-Vis absorption spectroscopy and temperature dependent electrical resistivity measurements. The micro-structural analysis by XRD and micro-Raman indicates that Pd addition can perturb the tungsten oxide lattice and suppress the grain growth. Optical band gap values of the films increases from 3.17 eV for pure WO3 to 3.29 eV for 5 wt% Pd incorporated WO3 films. All the films present high transparency in the visible spectral range. The electrical resistivity studies of the pure and Pd incorporated films done at room temperature and for the range of temperature; 170-450 K reveal that Pd addition can lower the resistivity of the WO3 thin films. Room temperature resistivity as well as activation energy of the film decreases exponentially with Pd incorporation concentration. Highly transparent, nanocrystalline and semiconducting WO3 films with low resistivity obtained by Pd incorporation can make WO3 suitable for microelectronics industry and for gas sensing applications.

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Physical properties of erbium implanted tungsten oxide films deposited by reactive dual magnetron sputtering

Cited by 17 publications

References 30 publications

Properties of Rf Plasma Nitrided Silicon Thin Films at Different Rf Plasma Processing Powers

Properties of Rf Plasma Nitrided Silicon Thin Films at Different Rf Plasma Processing Powers

Effects of thickness and rf plasma oxidizing on structural and optical properties of SiOxNy thin films

Micro-Structural, Electrical and Spectroscopic Investigations of Pulsed Laser Ablated Palladium Incorporated Nanostructured Tungsten Oxide Films

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