Effects of thickness and rf plasma oxidizing on structural and optical properties of SiOxNy thin films

A facile electrochemical approach for the deposition of iron–manganese phosphate composite coatings on aluminium

“…The peaks at 133.6 eV and 131.8 eV, with an area ratio of 1.23/2 and 0.77/2 can be ascribed to (HPO4) 2À and (PO 4 ) 3À , respectively. 40,[44][45][46][47]51,52 The high resolution spectrum of Fe can be deconvoluted into three main peaks, at 706.1 eV, 708.7 and 722.0 eV, with a satellite peak at 713.9 eV. The peak at 708.7 eV with an area ratio of 1.32/3 is characteristic of Fe 2+ while those observed at 722.0 eV with an area ratio of 1.34/3 and the satellite peak at 713.9 eV are characteristic of Fe 3+ .…”

Improvement in open circuit voltage of n‐ZnO/p‐Si solar cell by using amorphous‐ZnO at the interface

“…The degradation in device performance due to nonuniformity in thickness and other characteristics has so far been underestimated by semiconductor research community. Spatial thickness uniformity is an important parameter because it directly affects physical properties of the layer and thus performance of the device . Also, it plays important role in electrical characterization of the material/device.…”

A brief review on plasma for synthesis and processing of electrode materials

“…For example, under Nplasma environment, TiO2 could be N-doped via the replacement of partial O atoms by N atoms in TiO2 lattice. As time goes on, when all O atoms are replaced by N-atoms, TiO2 is converted into TiN [56][57][58][59]. In terms of chemical etching, volatile compounds are formed when elements on material surface react with species in plasma and then removed from the surface.…”