2020
DOI: 10.1016/j.mssp.2020.105207
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Physical properties of chemically deposited ZnS thin films: Role of the solubility curves and species distribution diagrams

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Cited by 16 publications
(9 citation statements)
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“…As the amount of zinc acetate solution increased from 0.1 M to 0.3 M, the bandgap of the films reduced from 3.5 eV to 2.6 eV. e decrease in bandgap may be due to an increase in crystallite size as the concentration of zinc acetate in the deposition bath is increased [25]. All ZnS thin films have high absorbance in the visible light area and bandgaps in the range of 3.5 eV to 2.6 eV, making them candidate materials for absorber layers in thin-film solar cells as well as effective visible light photocatalysts [26][27][28][29][30][31].…”
Section: Optical Absorption Studymentioning
confidence: 98%
“…As the amount of zinc acetate solution increased from 0.1 M to 0.3 M, the bandgap of the films reduced from 3.5 eV to 2.6 eV. e decrease in bandgap may be due to an increase in crystallite size as the concentration of zinc acetate in the deposition bath is increased [25]. All ZnS thin films have high absorbance in the visible light area and bandgaps in the range of 3.5 eV to 2.6 eV, making them candidate materials for absorber layers in thin-film solar cells as well as effective visible light photocatalysts [26][27][28][29][30][31].…”
Section: Optical Absorption Studymentioning
confidence: 98%
“…In recent years, a few researchers [ 98 , 124 , 125 , 126 ] had developed and employed species distribution diagrams (SDDs) and solubility curves (SCs) to undertake physicochemical analysis to analyze the synthesis of ZnS through the distinct species produced in the chemical solution as a function of the pH. It may provide the researcher with ideas before developing ZnS thin films.…”
Section: Synthesis Of Zns Thin Films Using a Chemical Bath Depositionmentioning
confidence: 99%
“…The value of n can be 0.5, 2, 1.5, and 3 for direct allowed, indirect allowed, direct forbidden, and indirect forbidden transitions, respectively. The band gap was estimated by extrapolating the linear part of the (𝛼h𝜈) 2 versus h𝜈 (eV) curve to the zero absorption. As shown in Figure 5b, the band gap value for the prepared thin films with Zn molar concentrations of 0.3, 0.2, and 0.1 m were found to be 3.4, 3.5, and 3.6 eV, respectively.…”
Section: Uv-vis Spectrophotometrymentioning
confidence: 99%
“…[1] ZnS compound has shown attractive properties owing to its wide band gap, good transmittance in visible range, nontoxicity, high stability, and ntype conductivity. [2][3][4][5] Various works already have used ZnS, for photovoltaic applications as a buffer layer for CIGS and CZTS. It is also investigated as an electron transport layer (ETL) for future perovskite solar cells applications, light-emitting diodes, and gas sensor applications.…”
Section: Introductionmentioning
confidence: 99%