Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi

Marko, Igor P.; Ludewig, Peter; Bushell, Zoe L.; Jin, S. R.; Hild, K.; Batool, Zahida; Reinhard, S.; Nattermann, L.; Stolz, W.; Volz, Kerstin; Sweeney, S. J.

doi:10.1088/0022-3727/47/34/345103

Cited by 61 publications

(82 citation statements)

References 23 publications

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“…For GaAs 0.97 Bi 0.03 QW lasers, the characteristic temperature in the temperature range of 15-40 • C is 125 K, higher than that in a typical 1.3 µm InGaAsP FP laser. Electrically pumped GaAsBi/GaAs laser is also presented by Sweeney et al [265] grown by MOCVD. For GaAs 0.956 Bi 0.044 FP lasers, lasing at 1038 nm is demonstrated at 180 K. In 2015, Mawst et al reported GaAsBi QW lasers with GaAsP as strain compensated barriers grown by MOCVD [266].…”

Section: Telecom and Mir Lasersmentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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Section: Telecom and Mir Lasersmentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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“…33 For the previously mentioned QW lasers of optimized 12% Al in barrier layer T 0 is equal to 100 K above RT. 11 This indicates that the low T 0 for GaAsBi LDs was mainly due to the non-radiative recombination caused by Bi-related defects. at different temperatures.…”

Section: Fig 2 Depicts Both Voltage-current (V-imentioning

confidence: 95%

“…For the SE performance, the device exhibits a single SE peak which is similar to other reported devices. 11 As the injected current increases from 50 to 300 mA, the spectrum displays a small blue shift of 20 nm from 1.15 µm to 1.13 µm due to the increased contribution from the higher energy states, accompanied with broadening of the SE line-width. The full width at half maximum (FWHM) of SE at low current is ∼84 meV, which is larger than kT (where k is the Boltzmann constant).…”

Section: Fig 2 Depicts Both Voltage-current (V-imentioning

confidence: 95%

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Electrically injected GaAsBi/GaAs single quantum well laser diodes

Liu

Pan

et al. 2017

AIP Advances

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We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm -1 and transparency current density of 196 A/cm 2 . The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77∼150 K, and reduced to 90 K in the range of 150∼273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77∼273 K.

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“…[1][2][3][4] The origin of these potential efficiency gains is an increased spin-orbit band separation (∆ SO ) in the bismides which suppresses dominant non-radiative Auger recombination processes.…”

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confidence: 99%

Enhancement of Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuth

Simmons

Jin

Sweeney

et al. 2015

Applied Physics Letters

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This paper reports on the predicted increase in the Rashba interaction due to the incorporation of Bi in GaAs/AlGaAs heterostructures. Band structure parameters obtained from the band anti-crossing theory have been used in combination with self-consistent Schrödinger-Poisson calculations and k.p models to determine the electron spin-splitting caused by structural inversion asymmetry and increased spin-orbit interaction. A near linear seven fold increase in the strength of the Rashba interaction is predicted for a 10% concentration of Bi in a GaAsBi/AlGaAs quantum well heterostructure.Over the past few years the growth of III-V bismide heterostructures has witnessed significant advances due to their potential for improved efficiency in photonic devices in the near infrared region.

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Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi

Cited by 61 publications

References 23 publications

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Electrically injected GaAsBi/GaAs single quantum well laser diodes

Enhancement of Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuth

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