Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

Mao, Ling‐Feng; Ning, Huansheng; Huo, Zongliang; Wang, Jinyan

doi:10.1038/srep18307

Cited by 14 publications

(8 citation statements)

References 32 publications

(50 reference statements)

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“…The Fermi level unpinning enables easy modulation of the Schottky barrier, a feature that can be exploited to tune Gr/Si devices to match specific performance requests 11,56 . Deviations from the Schottky-Mott prediction are mainly due to image force lowering 57 or hot electrons barrier lowering [58][59] .…”

Section: Fig 3cmentioning

confidence: 88%

“…Another important effect which can lead to a stronger V-dependence of the reverse current is the Schottky barrier lowering caused by hot electrons [58][59] that might originate even a quadratic ΔΦ B (V). In this scenario, the gating effect induces abrupt band bending around the Schottky barrier that increases the lateral field, which in turn produces significant enhancement of hot carriers.…”

Section: 𝑘𝑇mentioning

confidence: 99%

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Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

et al. 2016

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We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on ntype Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. 2These features render the device a photodetector with responsivity (3 / for white LED light at 3 2 ⁄ intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution.This work represents a significant advance in the realization of graphene/Si Schottky devices for optoelectronic applications.

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Section: Fig 3cmentioning

confidence: 88%

Section: 𝑘𝑇mentioning

confidence: 99%

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

et al. 2016

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“…Hot-carriers effects in GaN-based devices can decrease its channel electron density [20] and decrease its source-drain current [21], [22]. Hot-carriers effects in the graphene-based devices can reduce Schottky barrier height [23], shift its spectra of Raman photo-and electro-luminescence [24], be a physical origin of the ideality factor [25]. Hot carriers in organic semiconductor-based devices can reduce their effective activation energy [26].…”

Section: Introductionmentioning

confidence: 99%

Hot-Carriers’ Effect on the Performance of Organic Schottky Diodes

Mao

2020

IEEE Access

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Because thermionic emission or tunneling occurs when carriers overcome or tunneling through the barrier for any Schottky diode, hot carriers caused by the applied electric field can enhance carrier thermionic emission or carrier tunneling. An analytical and physical organic diode current equation that includes hot-carriers effect on the diode current equation has been proposed. When organic diode current equation has the same mathematical expression as Shockley diode current equation does, hot-carrier effects in organic semiconductor diodes can be a physical origin of the ideality factor and can reduce the barrier height for both band-like conduction mechanism and hopping conduction mechanism. The voltage-dependent ideality factor and temperature-dependent ideality factor predicted by the proposed model agree well with experimental data of organic semiconductor diodes reported in the literature. The proposed model can also physically explain the experimental relation between the ideality factor and the effective barrier height. The proposed model is useful in better physically understanding the carrier transport in organic semiconductor diodes. It also benefits to better optimize the organic semiconductor diode performance by tuning material properties.

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“…MOSFETs are used for amplifying or switching electronic signals. It has also been determined that the energy relaxation of channel electrons significantly affects the gate leakage current through the gate oxide of two-dimensional (2D) graphene FETs [8]. This is due to the short channel effect, which causes reliability issues, such as the dependence of the threshold voltage on the channel length [3]- [6].…”

Section: Introductionmentioning

confidence: 99%

“…The energy relaxation of the effect of channel electrons impacts in the performance of AlGaN/GaN high-electron mobility transistors could be used to explain the current-collapse phenomenon [7]. It has also been determined that the energy relaxation of channel electrons significantly affects the gate leakage current through the gate oxide of two-dimensional (2D) graphene FETs [8]. A physical model of the effective activation energy, which is based on the energy relaxation and momentum relaxation of electrons in organic semiconductors, and which agrees well with experimental data, has been previously proposed [9].…”

Section: Introductionmentioning

confidence: 99%

Impact of Energy Relaxation of Channel Electrons on Drain-Induced Barrier Lowering in Nano-Scale Si-Based MOSFETs

Mao

2017

ETRI Journal

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Drain‐induced barrier lowering (DIBL) is one of the main parameters employed to indicate the short‐channel effect for nano metal‐oxide semiconductor field‐effect transistors (MOSFETs). We propose a new physical model of the DIBL effect under two‐dimensional approximations based on the energy‐conservation equation for channel electrons in FETs, which is different from the former field‐penetration model. The DIBL is caused by lowering of the effective potential barrier height seen by the channel electrons because a lateral channel electric field results in an increase in the average kinetic energy of the channel electrons. The channel length, temperature, and doping concentration‐dependent DIBL effects predicted by the proposed physical model agree well with the experimental data and simulation results reported in Nature and other journals.

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Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

Cited by 14 publications

References 32 publications

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

Hot-Carriers’ Effect on the Performance of Organic Schottky Diodes

Impact of Energy Relaxation of Channel Electrons on Drain-Induced Barrier Lowering in Nano-Scale Si-Based MOSFETs

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