Physical Model for Current–Voltage Characteristics of Thin-Film Transistors

Abstract

A physical model is proposed for the current-voltage (I-V ) characteristics of thin-film transistors. Poisson's and carrier density equations are analytically solved in consideration of interface trap densities. The threshold voltage is no longer constant but dependent on the gate voltage and location in the channel region. The I-V characteristics are seamlessly calculated in the linear, saturation, and sub-threshold regions.