Physical model for burst noise in semiconductor devices

Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes

“…At V Ͼ 1.2 V the upper branch cannot be observed since the RTS mean pulse with in the upper state decrease with V. A similar effect was observed in forwardbiased devices and it was attributed to changes of quasiFermi-level relative to the energy position of the controlling RTS trap. 18,19 RTS fluctuations distinguishable from Gaussian noise are observed in reverse bias ͓see Fig. 2͑b͔͒.…”

“…2͑a͔͒ indicates that 50% of current is modulated, possibly by a strategically located trap. [17][18][19] Current increase is lowest for the TH stress ͑see Fig. 2͒, while the TH devices exhibit the largest optical power degradation ͑see Fig.…”

IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors

“…7a). The RTS amplitude is usually related to the carrier transport and interaction between the defect and the current [14][15][16]23] in the PP. The RTS mean pulse widths are related to defect properties (defect energy position, capture cross section, reconfiguration energies, etc.…”

Noise measurement of optoelectronic coupled devices for reliability screening: Is there an optimal threshold?

“…Hsu [10] first presented a physical model explaining burst noise. In this model, it is thought that heavy metal impurities deposited in the charge region of the p-n junction results in burst noise.…”