Physical investigations on perovskite LaMnO3-δ sprayed thin films for spintronic applications

Boukhachem, A.; Ziouche, A.; Amor, Mohamed Ben; Kamoun, Olfa; Zergoug, M.; Maghraoui-Meherzi, H.; Yumak, A.; Boubaker, K.; Amlouk, M.

doi:10.1016/j.materresbull.2015.10.003

Cited by 43 publications

(10 citation statements)

References 78 publications

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“…22,23 Oxygen deficient LaMnO 3Àd is expected to be a highly resistive n-type semiconducting manganite having electrons as charge carriers created due to the transformation of Mn 3+ to Mn 2+ . Boukhachem et al 24 have studied the polarizable nature of LaMnO 3Àd (LaMnO 2.75 ) using dielectric characterization. Few reports also exist on the field effect studies performed across the manganite conducting channel and electrically polarizable substrates.…”

Section: Introductionmentioning

confidence: 99%

Transport properties and electroresistance of a manganite based heterostructure: role of the manganite–manganite interface

Gadani

Dhruv

Joshi

et al. 2016

Phys. Chem. Chem. Phys.

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In this paper, we report the results of the investigations on the transport properties performed across the manganite-manganite interface in the LaMnO3-δ/La0.7Ca0.3MnO3/LaAlO3 (LMO/LCMO/LAO) heterostructure. The bilayered heterostructure was synthesized by a low cost and simple chemical solution deposition (CSD) method by employing the acetate precursor route. The same LMO/LCMO/LAO heterostructure was also grown using the dry metal oxide chemical vapor deposition (CVD) method and the results of transport characterization have been compared on the basis of wet and dry chemical methods used. XRD Φ-scan measurements were carried out to verify the structural quality and crystallographic orientations of LMO and LCMO manganite layers, for both wet and dry chemical method grown heterostructures. For wet and dry chemical methods, the temperature dependent resistance of the LMO/LCMO interface suggests the metallic nature. The asymmetric I-V curves collected at different temperatures show normal diode characteristics which get transformed to backward diode characteristics at high temperatures under high applied voltages at Vtr for both the methods. The values of Vtr are strongly dependent on the chemical method used. I-V data have been fitted using the Simmons model at different temperatures and discussed in terms of the spin-flip scattering mechanism for both wet and dry chemical method grown heterostructures. The electric field dependent electroresistance (ER) behavior of the presently studied LMO/LCMO manganite-manganite interface, grown using wet and dry chemical methods, has been understood on the basis of complex mechanisms including charge injection, formation of the depletion region, the tunneling effect, thermal processes and junction breakdown and their dependence on the applied electric field, field polarity and temperature studied.

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Section: Introductionmentioning

confidence: 99%

Transport properties and electroresistance of a manganite based heterostructure: role of the manganite–manganite interface

Gadani

Dhruv

Joshi

et al. 2016

Phys. Chem. Chem. Phys.

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“…Furthermore, this method can be selected for film production of large area with size grain controllable by controlling the doping concentration. Also, this technique leads to a large production area and it permits also the formation of thin films with possible control of oxygen vacancy by means of the use of both appropriate precursors and postannealing treatments in air [12][13][14][15].…”

Section: Methods Of Preparation and Characterization Techniquesmentioning

confidence: 99%

Magnetic Properties of Hausmannite Thin Films

Petkova¹

2017

Modern Technologies for Creating the Thin-Film Systems and Coatings

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The magnetic properties of hausmannite thin films are investigated in this chapter. The Verdet constant and angle of Faraday rotation are determined. The magnetic anisotropy of Mn 3 O 4 is explained by the measurement of the zero-field cooled (ZFC) and field cooled (FC) curves. This experiment is connected with the presentation of the ferromagnetic to superparamagnetic transition of the hausmannite.

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“…LaCrO 3 has been extensively studied as an electrode material in fuel cells [14], energy storage materials, catalysts, and for air purification methods, including controlling the concentration of pollutant gases like CO and CO 2 [15]. On the other hand, LaMnO 3 films are employed in spintronic devices [16,17].…”

Section: Introductionmentioning

confidence: 99%

“…) perovskite thin films including the sol-gel method [15,18,19], pulsed laser deposition (PLD) [20][21][22], polymer assisted deposition (PAD) [23,24], spray-pyrolysis (SP) [16,25], molecular beam epitaxy (MBE) [26], chemical vapor deposition (CVD) [14], atomic layer deposition (ALD) [27], and RF-magnetron sputtering [28]. The sol-gel method offers compositional control and substrate compatibility but has longer processing times, organic contaminants, and there is often a large volume cracking during drying [29].…”

Section: Introductionmentioning

confidence: 99%

Preparation and characterization of lanthanum-based perovskite oxides LaMO₃ (M=Fe, Cr, Mn) thin films by electrophoretic deposition

Aljurays,

Loucif,

Amer

et al. 2023

Mater. Res. Express

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In this study, we report the fabrication and characterization of perovskite thin films deposited on FTO substrates via electrophoretic deposition (EPD). The X-ray diffraction (XRD) patterns showed the formation of the orthorhombic structure for and films and the trigonal structure for the film. The field-emission scanning electron microscopy (FE-SEM) micrographs revealed nano-spherical particles with an average grain size of about 50 nm covering the surface with fewer porosities compared to the other films. Moreover, the film exhibited a higher transparency in the visible region (~84%). The estimated bandgaps of , , and perovskite films were found to be 2.17, 3.18, and 2.92 eV, respectively. In addition, the refractive indices of all deposited films were calculated using five empirical models that relate the refractive index to the bandgap, which consistently revealed a decrease in refractive index with an increase of bandgap energy This study holds significant implications for the field of perovskite thin films as we contribute new insights into the fabrication of lanthanum-based perovskite thin films using the EPD technique. The comprehensive characterization of microstructural, morphological, and optical properties provides valuable information for understanding the structure-property relationship in these materials. Furthermore, the determination of bandgaps and refractive indices enhances our understanding of the optical properties of perovskite films. The findings from this study pave the way for potential applications in optoelectronic devices, where fine-tuning of material properties is critical for optimal device performance.

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Physical investigations on perovskite LaMnO3-δ sprayed thin films for spintronic applications

Cited by 43 publications

References 78 publications

Transport properties and electroresistance of a manganite based heterostructure: role of the manganite–manganite interface

Transport properties and electroresistance of a manganite based heterostructure: role of the manganite–manganite interface

Magnetic Properties of Hausmannite Thin Films

Preparation and characterization of lanthanum-based perovskite oxides LaMO₃ (M=Fe, Cr, Mn) thin films by electrophoretic deposition

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Physical investigations on perovskite LaMnO3-δ sprayed thin films for spintronic applications

Cited by 43 publications

References 78 publications

Transport properties and electroresistance of a manganite based heterostructure: role of the manganite–manganite interface

Transport properties and electroresistance of a manganite based heterostructure: role of the manganite–manganite interface

Magnetic Properties of Hausmannite Thin Films

Preparation and characterization of lanthanum-based perovskite oxides LaMO3 (M=Fe, Cr, Mn) thin films by electrophoretic deposition

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Preparation and characterization of lanthanum-based perovskite oxides LaMO₃ (M=Fe, Cr, Mn) thin films by electrophoretic deposition