Physical Electro-Thermal Model for the Design of Schottky Diode-Based Circuits

Pérez-Moreno, Carlos G.; Grajal, Jesús

doi:10.1109/tthz.2014.2337655

Cited by 21 publications

(13 citation statements)

References 24 publications

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“…However, in order to accurately analyze and optimize the performances of high power multipliers, the thermal characteristics of Schottky diodes should be taken in to consideration. Over the last ten years, the introduction of self-consistent electrothermal model of Schottky diode multipliers has improved the designing procedures by analyzing the internal temperature distributions and offering useful information for circuit reliability and optimization [30]- [32]. The simulated performances based on electro-thermal exhibit better agreement with the measured results in previous researches [29], [30].…”

Section: Introductionmentioning

confidence: 79%

Development of High Power 220 GHz Frequency Triplers Based on Schottky Diodes

et al. 2020

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In this paper, the development of two high power 220 GHz frequency triplers is proposed. The GaAs Schottky diodes with six nodes are applied to realize high efficiency 220 GHz tripler, while the application of GaN Schottky diodes with eight nodes is another attempt to improve power handling of the 220 GHz tripler. To reduce thermal effect of high power multipliers, the AlN substrates with high thermal conductivity are applied to provide better heat dissipation at the diode areas. A combination of electrical and thermal model of the Schottky diodes is established while the optimization of 220 GHz triplers are realized with 3D electromagnetic (EM) simulation and harmonic balanced simulation. Good agreement is achieved between the simulated results based on electro-thermal model and measured performances of the triplers. At room temperature, peak efficiency of the tripler based on GaAs Schottky diodes is 17.8%, while the maximum output of the tripler is 38.2 mW with 300 mW input power. As for the 220 GHz GaN Schottky diode tripler, measured results show that the maximum power handling is beyond 400 mW. The peak efficiency and maximum output are 4.7% and 18.4 mW, respectively. The proposed methods of developing high power multipliers can be applied in higher frequency band in the future.

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Section: Introductionmentioning

confidence: 79%

Development of High Power 220 GHz Frequency Triplers Based on Schottky Diodes

et al. 2020

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“…The excessive self‐heating phenomenon in the small junction areas certainly would lead to rapid performance degradation or even junction breakdown. In order to evaluate the self‐heating level of the diode as well as its impacts on circuit performances, electronic analysis of the circuit should be performed in cooperate with thermal simulations [ 6–9 ] .…”

Section: Architecture and Designmentioning

confidence: 99%

“…On the other hand, the estimated real‐time temperature at each anode should provide the variations in diode parameters including saturation current ( I s ), series impedance ( R s ) and ideality factor ( n ). Generally, the existing electro‐thermal model only provide the temperature properties of saturation current ( I s ), series impedance ( R s ) and ideality factor ( n ) based on some approximate temperature‐dependent factors and the original values of these parameters at the ambient temperature [ 6–14 ] . Pérez‐Moreno [ 14 ] utilized the original values including I s ( T nom ) and R s ( T nom ) obtained from physics‐based numerical simulations, which needs to know the details of the anode and requires high computational ability due to the microscopic insight into the device physics.…”

Section: Architecture and Designmentioning

confidence: 99%

High Power 170 GHz Frequency Doubler Based on GaAs Schottky Diodes

Tian

Huang

et al. 2022

Chinese J of Electronics

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The research on high power 170 GHz frequency doubler based on the GaAs Schottky diodes is proposed in this paper. This basic doubler cell is developed with a 50-μm-thick, 600-μm-wide, and 2-mm-long AlN substrate with high thermal conductivity to reduce the thermal effect. Besides, power combined frequency doubler has been fabricated to improve the power capacity by a factor of two. Great agreement has been achieved between the simulated results based on electrothermal model and measured performances. At room temperature, the 3 dB bandwidth of the single doubler based on GaAs Schottky diodes is 11.8% over the frequency range from 160 to 180 GHz with pumping power of 150 to 330 mW. And the peak efficiency of the doubler is measured to be 33.1%, while the maximum output power is 101.7 mW at 174.08 GHz. As for power combined circuit, the best efficiency is 30.1% with a related output power of 204.6 mW. The proposed methods of developing high power multipliers can be applied in higher frequency band in the future.

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“…In RF circuits, the interaction between electromagnetic waves and the semiconductor device is strongly nonlinear, which can hardly be solved by analytic methods. Hence, the circuit simulation is critical to analyze characteristics of RF circuits with semiconductor devices 1 . Compared with the equivalent circuit model‐based simulation method, 2 the physics‐based circuit simulation shows great advantages in analyzing the circuits over wide frequencies 3,4 and wide power ranges, 5,6 such as analyzing the Schottky diode terahertz frequency multipliers 3,4 and failure analysis of the ESD protection device 5 .…”

Section: Introductionmentioning

confidence: 99%

A parameter extraction method of the PIN diode for physics‐based circuit simulation over a wide frequency range

Chen

Zhang

et al. 2020

Int J RF Microw Comput Aided Eng

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The accurate physical parameters of the semiconductor devices are critical to the physics-based circuit simulation, which solves the carrier transport equations to model the semiconductor devices. However, the conventional method extracts physical parameters from low-frequency measurements such as the DC I-V curve, which cannot work at high frequencies. To overcome this problem, we propose a physical parameter extraction method of the PIN diode working well from DC to microwave frequencies. Specifically, because the transit-time effects are dependent on the working frequencies and input power levels, the operation modes of the PIN diode can be divided into three cases from DC to microwave frequencies; therefore, the proposed method extracts the parameters from three measured curves, including the DC I-V curve, a small-signal, and a large-signal voltage waveform both at a microwave frequency. Experiments of a PIN diode SMP1330 circuit show that the error of the conventional method is about 45% at frequencies above 300 MHz, but the maximum error of the proposed method is only 9.5% from DC to 2 GHz. Moreover, the conventional method is unable to characterize the conductance modulation phenomenon, which leads to unexpected signal reflections in PIN limiter circuits and the missing of information in radio transceivers.

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Physical Electro-Thermal Model for the Design of Schottky Diode-Based Circuits

Cited by 21 publications

References 24 publications

Development of High Power 220 GHz Frequency Triplers Based on Schottky Diodes

Development of High Power 220 GHz Frequency Triplers Based on Schottky Diodes

High Power 170 GHz Frequency Doubler Based on GaAs Schottky Diodes

A parameter extraction method of the PIN diode for physics‐based circuit simulation over a wide frequency range

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