Development of High Power 220 GHz Frequency Triplers Based on Schottky Diodes

Abstract

In this paper, the development of two high power 220 GHz frequency triplers is proposed. The GaAs Schottky diodes with six nodes are applied to realize high efficiency 220 GHz tripler, while the application of GaN Schottky diodes with eight nodes is another attempt to improve power handling of the 220 GHz tripler. To reduce thermal effect of high power multipliers, the AlN substrates with high thermal conductivity are applied to provide better heat dissipation at the diode areas. A combination of electrical and thermal model of the Schottky diodes is established while the optimization of 220 GHz triplers are realized with 3D electromagnetic (EM) simulation and harmonic balanced simulation. Good agreement is achieved between the simulated results based on electro-thermal model and measured performances of the triplers. At room temperature, peak efficiency of the tripler based on GaAs Schottky diodes is 17.8%, while the maximum output of the tripler is 38.2 mW with 300 mW input power. As for the 220 GHz GaN Schottky diode tripler, measured results show that the maximum power handling is beyond 400 mW. The peak efficiency and maximum output are 4.7% and 18.4 mW, respectively. The proposed methods of developing high power multipliers can be applied in higher frequency band in the future.

Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array

“…THz sources based on gallium nitride (GaN) or complementary metal oxide semiconductor (CMOS) technology have been widely studied. GaN Schottky diode-based sources show better performance in high power dissipation, up to 1.1 W, but the efficiency is much lower than that of GaAs-based circuits [16,17]. THz sources based on silicon/SiGe CMOS around 300 GHz have also been reported, which generally show great advantages of high integration.…”

High Power 170 GHz Frequency Doubler Based on GaAs Schottky Diodes

“…And the fitted model in this work shows higher temperature-dependence than the models in Ref. [6], as shown in Fig. 4.…”

“…The thermal matrix could be simplified to a 3×3 matrix because of the circuit symmetry [6] . Meanwhile, the thermal resistance elements would be calculated as a function of dissipated power according to the temperature variation of each anode obtained by applying power source at one junction [6] , as shown in Fig. 3(a).…”

“…In this paper, a self-consistent electro-thermal model modified from [6] has been used to evaluate the electrical and thermal performances of the balanced dou-bler. This model could evaluate the junction temperatures based on the dissipated power and thus adjusting the temperature-dependent electrical parameters of the varactors, as shown in Fig.…”

A 140 GHz high efficiency frequency doubler based on a physical‐based SDD model of SBD

“…After optimizing the efficiency, the geometric dimensions of the matching parts are obtained and then used to build the HFSS models. If the S‐parameters of the HFSS models are inconsistent with those from the ADS models, we need go back to the previous steps to redesign the matching parts 23 . If these two are consistent with each other, then the HFSS model is usable and the complete EM model of the douber is built in HFSS, 24,25 as shown in Figure 10.…”