Physical characterization of Cu2ZnGeSe4 thin films from annealing of Cu–Zn–Ge precursor layers

Buffière, Marie; Elanzeery, Hossam; Oueslati, Souhaib; Messaoud, Khaled Ben; Brammertz, Guy; Meuris, Marc; Poortmans, Jef

doi:10.1016/j.tsf.2014.09.024

Cited by 31 publications

(25 citation statements)

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“…For thin film tandem cells, different technologies were used focusing on integrating high bandgap solar cells on standard thin film technologies through 2‐terminal, 3‐terminal, or 4‐terminal junctions . Recently, an increasing number of absorber materials with the potential to act as a top higher bandgap cell have been investigated . Perovskites have demonstrated the ability to achieve high efficiencies, and because of their high bandgap, they have been implemented as top cells in different tandem configurations using standard bottom cells .…”

Section: Introductionmentioning

confidence: 99%

“…6 Recently, an increasing number of absorber materials with the potential to act as a top higher bandgap cell have been investigated. [7][8][9][10][11][12][13] Perovskites have demonstrated the ability to achieve high efficiencies, 10 and because of their high bandgap, they have been implemented as top cells in different tandem configurations using standard bottom cells. [11][12][13] On the other side, Cu(In,Ga)Se 2 (CIGS) is so far the most promising technology for thin film solar cells.…”

Section: Introductionmentioning

confidence: 99%

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High‐performance low bandgap thin film solar cells for tandem applications

Elanzeery

Babbe

Melchiorre

et al. 2018

Progress in Photovoltaics

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Thin film tandem solar cells provide a promising approach to achieve high efficiencies. | INTRODUCTIONCurrently, there is an increasing demand to provide cheap high-efficiency solar cells that can exceed state-of-the-art single-junction solar cell technologies. One approach to achieve this is through using tandem solar cells. Tandem or multijunction solar cells have the potential to achieve efficiencies of more than 30%. set the full illumination intensity for the IVT measurements. A mechanical shutter was used to allow dark and illuminated measurements within the same experiment. Admittance measurements were performed in the dark, after keeping the sample mounted in the dark at room temperature for 1 night, with an LCR meter using the same cryostat setup. All characterizations were performed after adding the ARC layer. For the extraction of the quasi-Fermi-level splitting (qFLS), photoluminescence (PL) spectra were recorded on CdS-covered absorbers in a home-built calibrated setup at room temperature under continuous monochromatic illumination with 660-nm wavelength. 27,28The spectral and absolute corrected PL spectra are converted into energy space. In a semilogarithmic plot, the high-energy wing of the PL peak is fitted linearly and is evaluated by means of the simplified Planck's generalized law, 29 providing the qFLS as well as the temperature. Figure 1A. Figure 1 A also presents the electrical behavior under light for CIS_0.95 measured in-house. Table 1 as a function of absorber bandgap are shown in Figure 2. All IV measurements were performed after adding an ARC layer.In Figure 1A, it is observed that V OC increases and J summarized in Table 1, it can be concluded that the cells lose more in recombination than in incomplete absorption (η el < η op ). Moreover, the

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High‐performance low bandgap thin film solar cells for tandem applications

Elanzeery

Babbe

Melchiorre

et al. 2018

Progress in Photovoltaics

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“…In recent years, the rather new kesterite-type Cu 2 ZnGeS x Se 4-x (CZGSSe) has gained attention as a high band gap absorber material for thin-film solar cells [1][2][3][4][5][6]. Its similarity to the extensively studied Cu 2 ZnSnS x Se 4-x (CZTSSe) offers potential for fast progress in the improvement of material properties and solar cell efficiency, with a record value of 6.0% so far [3].…”

Section: Introductionmentioning

confidence: 99%

Band Gap Tuning of Cu2ZnGeSxSe4-x Absorbers for Thin-Film Solar Cells

2017

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“…Recently, the quaternary semiconductors Cu 2 Zn–IV–VI 4 (IV = Si, Ge, Sn and VI = S, Se) have received wide attention as potential solar cell absorber materials. They can be obtained by replacing Indium in CIGSSe with relatively earth abundant and non‐toxic materials . In this category of compounds, Cu 2 ZnSiSe 4 (CZSiSe) has attracted significant interest because of its optical , thermoelectric , and optoelectronic properties .…”

Section: Introductionmentioning

confidence: 99%

Multistep deposition of Cu₂Si(S,Se)₃ and Cu₂ZnSiSe₄high band gap absorber materials for thin film solar cells

Elanzeery

Buffière

Messaoud

et al. 2015

Physica Rapid Research Ltrs

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Cu2ZnSi(S,Se)4 and Cu2Si(S,Se)3 are potential materials to obtain cost effective high band gap absorbers for tandem thin film solar cell devices. A method to synthesize Cu2SiS3, Cu2SiSe3and Cu2ZnSiSe4thin film absorbers is proposed. This method is based on a multistep process, using sequential deposition and annealing processes. X‐ray diffraction analysis performed on the final thin films have confirmed the presence of the Cu2Si(S,Se)3 and Cu2ZnSiSe4phases. Scanning electron microscopy images revealed the formation of polycrystalline layers with grains size up to 1 µm. The band gap of the ternary Cu2SiSe3 and Cu2SiS3, and quaternary Cu2ZnSiSe4 based thin films as determined from optical and photoluminescence measurements are found to be close to their theoretical values. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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Physical characterization of Cu2ZnGeSe4 thin films from annealing of Cu–Zn–Ge precursor layers

Cited by 31 publications

References 11 publications

High‐performance low bandgap thin film solar cells for tandem applications

High‐performance low bandgap thin film solar cells for tandem applications

Band Gap Tuning of Cu2ZnGeSxSe4-x Absorbers for Thin-Film Solar Cells

Multistep deposition of Cu₂Si(S,Se)₃ and Cu₂ZnSiSe₄high band gap absorber materials for thin film solar cells

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Physical characterization of Cu2ZnGeSe4 thin films from annealing of Cu–Zn–Ge precursor layers

Cited by 31 publications

References 11 publications

High‐performance low bandgap thin film solar cells for tandem applications

High‐performance low bandgap thin film solar cells for tandem applications

Band Gap Tuning of Cu2ZnGeSxSe4-x Absorbers for Thin-Film Solar Cells

Multistep deposition of Cu2Si(S,Se)3 and Cu2ZnSiSe4high band gap absorber materials for thin film solar cells

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Product

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Multistep deposition of Cu₂Si(S,Se)₃ and Cu₂ZnSiSe₄high band gap absorber materials for thin film solar cells