Physical and electrical characterization of high-performance Cu 2 ZnSnSe 4  based thin film solar cells

Oueslati, Souhaib; Brammertz, Guy; Buffière, Marie; Elanzeery, Hossam; Touayar, O.; Köble, Ch.; Bekaert, J; Meuris, Marc; Poortmans, Jef

doi:10.1016/j.tsf.2014.10.052

Cited by 59 publications

(48 citation statements)

References 11 publications

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“…30 However PL spectra of high performing pure selenide CZTSe devices show a peak close to 1 eV. 31 In order to determine the phase uniformity of crystalline CZTSe along the film thickness, selenized CZTSe sample was further characterized by SEM-EDS line profile along the cross-section of the film. It is evident from Fig.…”

Section: D304mentioning

confidence: 99%

Co-Electrodeposition of Metallic Precursors for the Fabrication of CZTSe Thin Films Solar Cells on Flexible Mo Foil

Khalil

Bernasconi

Pedrazzetti

et al. 2017

J. Electrochem. Soc.

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Earth abundant Cu 2 ZnSnSe 4 (CZTSe) thin films solar cells were fabricated on flexible molybdenum (Mo) foil substrate through an electrochemical approach. After co-electroplating from single electrolyte, Cu-Zn-Sn (CZT) precursor was selenized in quartz tube furnace at 550 • C for 15 minutes in Ar atmosphere with the presence of elemental selenium in order to form CZTSe compound. Before selenization, CZT precursor was soft-annealed at 310 • C for 150 minutes in Ar atmosphere in order to improve intermixing of the elements and to reduce roughness. The formation of Kesterite CZTSe on selenized film was confirmed by X-ray diffraction (XRD) and Raman spectroscopy. SEM imaging and EDS line profile on the cross-section of CZTSe layer showed the well-formed CZTSe along depth of the film also. Opto-electrical characteristics of the film by photoluminescence spectroscopy confirmed the suitability of the absorber layer to make solar cell. A flexible solar cell with Al/Al-ZnO/i-ZnO/CdS/CZTSe/Mo-foil configuration, which showed 0.1% power conversion efficiency at first attempt, has been fabricated, in which buffer layer CdS has been deposited through chemical bath deposition and transparent conducting oxides (i-ZnO, Al-ZnO) have been deposited by DC pulsed sputtering. Thin films solar cells based on earth abundant Kesterite Cu 2 ZnSn(S,Se) 4 absorber layers have drawn significant attention within the research community over the last few years as future low cost photovoltaic devices in order to meet global energy demand in tera-watt scale. These materials are direct bandgap p-type semiconductors for which the bandgap ranges from 1.0 eV for Cu 2 ZnSnSe 4 (CZTSe) to 1.5 eV for Cu 2 ZnSnS 4 (CZTS) and at the same time they have very high optical absorption coefficients of over 10 4 cm −1 which make them potential alternative as absorber layer for existing commercialized thin films solar cells Cu 2 InGaSe 4 (CIGS) and CdTe.1 As CIGS and CdTe contain earth scarce, costly and toxic materials, so they need to be replaced. Different vacuum and non-vacuum techniques have already been employed to fabricate high quality crystalline Kesterite compounds. Up to now, highest 12.6% power conversion efficiency of sulfo-selenide Cu 2 ZnSn(S,Se) 4 thin film solar cell was achieved using hydrazine based solution process. 2 Whereas highest power conversion efficiencies of pure sulfide CZTS (obtained from evaporation) and pure selenide CZTSe (obtained from sputtering) thin film solar cells are 9.2% and 11.6% respectively reported.3,4 Those highest power conversion efficiencies were achieved when conventional molybdenum (Mo) coated soda lime glass was used as a back contact substrate. On the other hand, till now highest power conversion efficiencies of CZTS and CZTSe thin film solar cells on flexible substrate were reported 4.2% and 6.1%. 5,6 In order to reduce production costs and deployment of thin film PV-based technologies in mass scale, Kesterite-based thin film solar cells technologies should be manufacturable at high throughput with low cos...

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Section: D304mentioning

confidence: 99%

Co-Electrodeposition of Metallic Precursors for the Fabrication of CZTSe Thin Films Solar Cells on Flexible Mo Foil

Khalil

Bernasconi

Pedrazzetti

et al. 2017

J. Electrochem. Soc.

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“…Both of these peaks are attributed to the kesterite CZTSe phase. The lower intensity peak located at 232e233 cm À1 is also due to the CZTSe phase [8]. The other low intensity peak at 251e252 cm À1 is probably related to cubic ZnSe and it is present in both "A" and "B" type films, which are both Znrich.…”

mentioning

confidence: 94%

“…Spin coating yielded the highest efficiency (12.6%) devices to date employing absorbers containing both Se and S [7]. Qeslati et al demonstrated 10.4% efficient cells using films obtained by the selenization of sputtered metallic films in an H 2 Se atmosphere [8]. J. Marquez-Prieto et al reacted sputtered CueZneSn metallic films with evaporated Se layers at temperatures between 380 C and 550 C to form the compound [9].…”

Section: Introductionmentioning

confidence: 99%

Influence of copper composition and reaction temperature on the properties of CZTSe thin films

Olğar

Atasoy

Başol

et al. 2016

Journal of Alloys and Compounds

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a b s t r a c tIn this study Cu 2 ZnSnSe 4 (CZTSe) compound layers were grown using a two-stage technique that involved deposition of metallic precursors (Cu, Zn, and Sn) and Se in the first stage, followed by reaction of all the species at temperatures between 525 C and 600 C, during the second stage of the process. Two sets of samples, one with Cu-poor, Zn-rich and the other with Cu-rich, Zn-rich compositions, were prepared and their structural, optical and electrical properties were measured. XRD analyses showed the characteristic peaks of CZTSe regardless of the Cu content and the processing temperature. However, for samples reacted at temperatures of 575 C and 600 C a Cu 2-x Se secondary phase separation was detected for all films suggesting that the reaction temperatures should be limited to values below 575 C in a twostage process such as ours. Excessive Sn loss was also present in samples processed at the highest temperatures. Raman scattering measurements confirmed formation of the CZTSe kesterite structure, and also indicated a small ZnSe phase, which could not be detected by XRD. Scanning electron micrographs demonstrated dense film structure with the Cu-rich films having smoother morphology. Optical characterization showed that increasing the Cu content in the compound layers caused a reduction in the optical band gap values due to increased interaction between the Cu-3d orbital electrons and the Se-4p orbital electrons. Electrical measurements showed that the carrier concentration increased with Cu content.

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“…The record efficiency for electrodeposited CZTS reached 8.0% [7][8], DC magnetron sputtering deposition [9] (efficiency for CZTS solar cells -10.4%) [10][11], spray pyrolysis deposition [12], sol-gel [13], the ink-print method with a conversion efficiency of 7.2% [14], mechanochemical [15], solvothermal [16] and so on.…”

Section: Introductionmentioning

confidence: 99%

Properties and characterization of CZTS nanoparticles prepared by microwave heating irradiation

Grincienė¹,

Pakštas²,

Giraitis³

et al. 2018

chemija

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Cu 2 ZnSnS 4 (CZTS) nanoparticles suitable for solar cell absorber fabrication were synthesized by the microwave-assisted heating method. The influence of the reaction temperature, the temperature increase duration and post-annealing temperature on the chemical composition, crystallographic structure, phase purity and optical properties of CZTS nanocrystals has been investigated by means of XRD, Raman spectroscopy, scanning (SEM) and transmission electron microscopies (TEM), EDX and UV-Vis spectroscopies. The chemical composition of the CZTS nanoparticles synthesized at a temperature of 250°C and the temperature increase duration of 10 min are almost stoichiometric. The post-annealing process of CZTS has been investigated by means of the in situ XRD method. The results obtained point to the presence of a pure CZTS phase after annealing of the synthesized powder at a temperature of 550°C. The direct band gap energy (E g ) of the CZTS nanoparticles obtained depends on the post-annealing temperature and reaches nearly 1.5 eV at 550°C.

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Physical and electrical characterization of high-performance Cu 2 ZnSnSe 4 based thin film solar cells

Cited by 59 publications

References 11 publications

Co-Electrodeposition of Metallic Precursors for the Fabrication of CZTSe Thin Films Solar Cells on Flexible Mo Foil

Co-Electrodeposition of Metallic Precursors for the Fabrication of CZTSe Thin Films Solar Cells on Flexible Mo Foil

Influence of copper composition and reaction temperature on the properties of CZTSe thin films

Properties and characterization of CZTS nanoparticles prepared by microwave heating irradiation

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