Physical Analysis and Design of Resonant Plasma-Wave Transistors for Terahertz Emitters

Park, Jong Yul; Kim, Sung Hoon; Hong, Sungmin; Kim, Kyung Rok

doi:10.1109/tthz.2015.2392630

Cited by 6 publications

(6 citation statements)

References 39 publications

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“…For k L > 0 , where the superscript L indicates quantities on the LHS and R the ones on the RHS, we get with Thus, for the piecewise constant subband energy profile the characteristic curves are no longer continuous at z i+ 1 ∕2 and the values of the distribution function on the left and right sides of the step have to be distinguished. For k R < −K i+ 1 ∕2 , the electrons can pass the barrier from right to left resulting in the negative root for the wavenumber together with (10). For |k R | < K i+ 1 ∕2 , we get reflection Discrete equations are obtained by box integration in the k-space.…”

Section: Theorymentioning

confidence: 99%

“…Flux conservation for particles moving from right to left results with (10) and (12) inThe second term on the RHS is due to the assumption of a maximal positive wavenumber k +…”

Section: Theorymentioning

confidence: 99%

“…The main idea, based on the shallow-water analogy put forward by Dyakonov and Shur [6][7][8], is to use field-effect transistors with high-mobility channels as nonlinear elements for the resonant detection of incident THz radiation. Moreover, the possibility of plasma instabilities leading to the emission of THz radiation by planar field-effect transistors, as pointed out by Dyakonov and Shur, has resulted in investigations by many groups (e.g., [9][10][11][12][13]). The question arises whether similar plasma instabilities could occur in nanowire or nanotube transistors.…”

Section: Introductionmentioning

confidence: 99%

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A numerical approach to quasi-ballistic transport and plasma oscillations in junctionless nanowire transistors

2020

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A numerical framework for DC and RF small-signal simulations of nanowire transistors is presented, which is based on the self-consistent solution of the Poisson, Schrödinger, and Boltzmann transport equations and is stable for the entire range from weak to strong particle scattering. The proposed approach does not suffer from the deficiencies due to the transformation of the Boltzmann transport equation into the energy space and can handle the quasi-ballistic case. This is a key requirement for the investigation of plasma resonances and other high-mobility phenomena. The in-house solver is validated with results of a previously developed simulator based on the H-transformation for a conventional N + NN + silicon transistor with strong scattering. Then, its results are compared with those of moments-based models and it is shown that these do not provide a satisfactory description of the electron dynamics in the quasi-ballistic transport regime. Furthermore, the internal boundary conditions of the transport models at the contacts are found to have a significant impact on plasma resonances and the physics-based thermal-bath boundary condition strongly suppresses them.

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Section: Theorymentioning

confidence: 99%

“…Flux conservation for particles moving from right to left results with (10) and (12) inThe second term on the RHS is due to the assumption of a maximal positive wavenumber k +…”

Section: Theorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A numerical approach to quasi-ballistic transport and plasma oscillations in junctionless nanowire transistors

2020

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“…Very popular 1D model [1][2][3][4][5][6][7][8] is based on the two first BTE moments: the continuity equation and the momentum balance equation (Euler equation) without pressure gradient. The Poisson equation is not included in the model.…”

Section: Introductionmentioning

confidence: 99%

“…The main advantage of these models is their simplicity, which allows us to get analytical expressions for DC response to the incoming THz signal. In some cases [1][2][3][4][5][6][7][8], continuous or damped plasma waves may be observed. The main disadvantage of the models [1][2][3][4][5][6][7][8][9][10][11] is ignoring totally the 2D nature of the HEMT or nMOS transistor.…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional hydrodynamic modelling of AlGaN/GaN transistor-based THz detectors

Vyšniauskas,

Ikamas,

Vizbaras

et al. 2023

physics

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Here, we report on numerical modelling of AlGaN/GaN HEMT terahertz detectors using a two-dimensional solver based on three Boltzmann transport equation (BTE) moments and the Poisson equation. We use the Synopsys TCAD Sentaurus program package, which offers a wide material database and the possibility to include traps and polarization charges for the formation of the channel without any doping. The implications of different levels of model simplifications are addressed both analytically and numerically. We calculated the current responsivity R, to THz radiation on the drain voltage in the frequency range 0.01-3.0 THz for three AlGaN layer thicknesses d= 15, 20 and 25 nm and different gate lengths. We demonstrate that only a hydrodynamic model can reproduce the change in the sign in current responsivity at the gate voltage UG9 (R1 = 0 at UG = UG0). The energy flux factor in the energy balance equation determines this effect. For the simulated structures, we find that the noise equivalent power may be as low as 0.1 pW/VHz at 0.04 THz and 10 pW/VHz at 3.0 THz.

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Terahertz emission from biased AlGaN/GaN high-electron-mobility transistors

Lisauskas

Rämer

Burakevič

et al. 2019

Journal of Applied Physics

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We report on the results of a comprehensive study of THz emission from a set of dedicated AlGaN/GaN high-electron-mobility transistors. We find that voltage-biased transistors indeed emit in the THz frequency range, as reported in the literature; however, our data let us conclude that this radiation cannot be directly attributed to plasmonic instability phenomena. Instead, two other distinct mechanisms are identified. One is based on high-frequency self-oscillations originating from positive feedback within the frequency range where the transistor provides gain. Such oscillations are especially facilitated by the integration of antenna structures and cease to exist after taking specific measures for circuit stabilization. Another mechanism is identified for the case of broadband emission from multifinger transistors fabricated without any specific antenna. In contrast to the predictions of the plasmonic instability picture, the spectra of this emission depend on the gate and drain biasing conditions and on the bias modulation frequency. This emission can be understood as a combination of thermal emission from the heated material and from thermally excited plasmons and trap states.

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Physical Analysis and Design of Resonant Plasma-Wave Transistors for Terahertz Emitters

Cited by 6 publications

References 39 publications

A numerical approach to quasi-ballistic transport and plasma oscillations in junctionless nanowire transistors

A numerical approach to quasi-ballistic transport and plasma oscillations in junctionless nanowire transistors

Two-dimensional hydrodynamic modelling of AlGaN/GaN transistor-based THz detectors

Terahertz emission from biased AlGaN/GaN high-electron-mobility transistors

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