Photovoltaic properties of low-damage magnetron-sputtered n-type ZnO thin film/p-type Cu2O sheet heterojunction solar cells

Miyata, Toshihiro; Tokunaga, Hiroki; Watanabe, Kyosuke; Ikenaga, Noriaki; Minami, Tadatsugu

doi:10.1016/j.tsf.2020.137825

Cited by 17 publications

(7 citation statements)

References 21 publications

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“…Therefore, ZnO nanoparticles have broad application prospects in gas sensing, photoelectric detection, and photoelectric catalysis 1 – 5 There are many methods that can be used to prepare ZnO nanostructures, which include hydrothermal synthesis, 6 – 8 electrochemical growth, 9 , 10 sol–gel, 11 – 13 magnetron sputtering, 14 – 16 and molecular beam epitaxy 17 , 18 . Using different preparation methods and tuning different preparation parameters during the experiments, ZnO nanostructures with different morphologies can be obtained.…”

Section: Introductionmentioning

confidence: 99%

Growth and optical properties of ZnO nanorods on the full surface of porous silicon by sol–gel method and oil bath method

et al. 2023

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A method for the preparation of composites that allow the growth of ZnO nanorod structures on the full surface of porous silicon (polished surface, pore walls, and pore bottoms) is presented. The porous silicon is obtained by electrochemical etching of P-type silicon (100). The nanorods were grown in two steps: a sol-gel method and an oil bath method. The morphology of ZnO nanorods at different concentrations of the growth solution was investigated using scanning electron microscopy. X-ray diffraction confirmed the formation of ZnO hexagonal fibrous zincite structures. UV-Vis absorption spectroscopy confirmed that the composites possess good light absorption in the broad spectral region. In the wavelength range of 300 to 400 nm, the light absorption value of the porous silicon/zinc oxide (porous Si/ZnO) nanorods was increased by ~25% compared to that of the porous Si/ZnO films. The photoluminescence spectra confirmed the luminescence performance of the composites. Finally, the optical properties of the composites were further verified by simulation calculations.

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Section: Introductionmentioning

confidence: 99%

Growth and optical properties of ZnO nanorods on the full surface of porous silicon by sol–gel method and oil bath method

et al. 2023

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“…Zinc oxide (ZnO) thin films prepared by physical methods such as radio frequency magnetron sputtering continue to be of high interest due to their low cost and low absorption of visible light, triggering an enhanced UV photoresponse of the photodetector, transparent conductive electrodes in solar cells, and fluorescence imaging performance [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

Ca-Doped ZnO:Al Thin Films: Synthesis and Characterization

et al. 2021

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We unveiled the effect of doping on the morpho-structural and opto/electrical properties of Ca-doped ZnO:Al thin films obtained by RF magnetron sputtering. Scanning electron microscopy (SEM) was performed to reveal the surface morphology, while the composition and crystal structure were investigated by energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The correlation between the microstructure and the electrical conductivity identifies an increase in electrical conductivity up to 145 × 10−3 Ω−1·m−1 at 5 wt.% Ca doping level with the decrease in the grain size. Furthermore, the presence of Ca dopant triggers the occurrence of the emission peak at 430 nm and an increase of the green emission peak in PL spectra. Corroborating the electrical measurements with X-ray diffraction and optical measurements, one can infer that the electrical conductivity is dominated by intrinsic defects developed during deposition and by the existence of dopants.

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“…Nevertheless, Ruthenium is a rare and expensive metal, accounting for the final cost of the solar cell in industrial applications 11 . Also, studies on the photovoltaic devices based on copper oxide, a semiconductor oxide capable of absorbing in the visible region, have been developed in the recent years 12‐14 …”

Section: Introductionmentioning

confidence: 99%

“…11 Also, studies on the photovoltaic devices based on copper oxide, a semiconductor oxide capable of absorbing in the visible region, have been developed in the recent years. [12][13][14] Cuprous oxide (Cu 2 O) is considered a promising material because it has an adequate band gap energy (E bg ) and high absorption coefficient in the visible-light region. 15 Besides, this oxide is a p-type semiconductor with a band gap energy (E bg ) of about 2.2 eV, terrestrial abundance, low cost, and non-toxicity.…”

Section: Introductionmentioning

confidence: 99%

“…[31][32][33][34][35] The operation of the device with p-n heterojunction occurs due to the difference in charge concentration at the interface of two semiconductors. 36,37 Unfortunately, this type of solar cell still requires expensive technology for film preparation, 29,38,39 as is the case of silicon solar cells, which are p-n heterojunction semiconductors that demand expensive equipment and a large structure for their manufacture, including cleanrooms. Therefore, further studies must be carried out to overcome these drawbacks.…”

Section: Introductionmentioning

confidence: 99%

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An investigation of photovoltaic devices based onp‐typeCu₂Oandn‐typeγ‐WO₃junction through an electrolyte solution containing a redox pair

et al. 2020

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Summary In this article, we report a solar cell prepared with p‐type cuprous oxide (Cu2O) and n‐type gamma‐tungsten oxide (γ‐WO3) films combined by an redox electrolyte in a configuration similar to that used in dye‐sensitized solar cells. Cu2O films were prepared by the electrochemical method in three different pH conditions. X‐ray diffraction patterns revealed that the Cu2O films presented a crystalline phase with cubic structure after deposition, whereas the n‐type γ‐WO3 film was prepared by the drop‐casting method. Optical analyses showed that both oxide films absorb visible light. After the photoelectrochemical characterization of the films, solar cells configured like a “sandwich” (Cu2O/electrolyte/γ‐WO3) were assembled and investigated under irradiation of 100 mW cm−2. The solar cell with I−/I3− redox pair showed better results than that prepared with polysulfide K2S/Sn2− electrolyte. For each solar cell, the investigated parameters were short‐circuit current density, open‐circuit voltage, fill factor, maximum power, and cell efficiency. The method proposed here can be considered new, promising, and simple for the preparation of solar cells with a p–n junction.

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Photovoltaic properties of low-damage magnetron-sputtered n-type ZnO thin film/p-type Cu2O sheet heterojunction solar cells

Cited by 17 publications

References 21 publications

Growth and optical properties of ZnO nanorods on the full surface of porous silicon by sol–gel method and oil bath method

Growth and optical properties of ZnO nanorods on the full surface of porous silicon by sol–gel method and oil bath method

Ca-Doped ZnO:Al Thin Films: Synthesis and Characterization

An investigation of photovoltaic devices based onp‐typeCu₂Oandn‐typeγ‐WO₃junction through an electrolyte solution containing a redox pair

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Photovoltaic properties of low-damage magnetron-sputtered n-type ZnO thin film/p-type Cu2O sheet heterojunction solar cells

Cited by 17 publications

References 21 publications

Growth and optical properties of ZnO nanorods on the full surface of porous silicon by sol–gel method and oil bath method

Growth and optical properties of ZnO nanorods on the full surface of porous silicon by sol–gel method and oil bath method

Ca-Doped ZnO:Al Thin Films: Synthesis and Characterization

An investigation of photovoltaic devices based onp‐typeCu2Oandn‐typeγ‐WO3junction through an electrolyte solution containing a redox pair

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Product

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An investigation of photovoltaic devices based onp‐typeCu₂Oandn‐typeγ‐WO₃junction through an electrolyte solution containing a redox pair