Ca-Doped ZnO:Al Thin Films: Synthesis and Characterization

Istrate, Anca-Ionela; Mihalache, Iuliana; Romanițan, Cosmin; Tutunaru, Oana; Vulpe, Silviu; Nastase, F.; Veca, L. Monica

doi:10.3390/coatings11091023

Cited by 5 publications

(4 citation statements)

References 32 publications

(32 reference statements)

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“…As we noted above, co-doping is one of the most promising ways to solve the urgent problem of improving the microstructure of ZnO-based TCO films and, consequently, their electrical characteristics [ 11 , 12 , 13 , 14 , 15 , 37 ]. To be fully aware of the aspects leading to the improved crystallization and enhanced conductivity of the co-doped ZnO-based TCO films, the role of each introduced impurity has to be considered separately and in combination with each other.…”

Section: Resultsmentioning

confidence: 99%

“…However, for the wider use of the ZnO-based TCO films as transparent electrodes in modern optoelectronic devices, some improvements in thin films’ performance regarding their electrical properties and long-term stability are further required both by optimizing the thin-film deposition processes and by tuning the film doping. Regarding the doping optimization, if a large number of earlier studies were devoted to finding the best donor for ZnO TCO films, as well as optimizing the level of doping, an increasing number of reports have recently appeared indicating that the simultaneous co-doping of ZnO with two or more types of impurities leads to a noticeable improvement in the electrical characteristics of TCO films, as well as their microstructures [ 10 , 11 , 12 , 13 , 14 , 15 ]. In particular, we have shown that the co-doping of ZnO with Ga and B leads to the formation of denser films with an improved film microstructure and, as a result, to an increase in the thermal stability of ZnO TCO films [ 10 ].…”

Section: Introductionmentioning

confidence: 99%

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On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films

Асваров

Abduev²,

Akhmedov

et al. 2022

Materials

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In this study, a set of ZnO-based thin films were prepared on glass substrates at various substrate temperatures via the direct current magnetron sputtering of ceramic targets with the following compositions: pure ZnO, Al-doped ZnO with doping levels of 1 and 2 at.%, Ga-doped ZnO with doping levels of 1 and 2 at.%, and (Al, Ga)-co-doped ZnO with doping levels of 1 and 2 at.% for each impurity metal. The dependencies of sheet resistance, carrier concentration, and Hall mobility on the substrate temperature were studied for the deposited films. The results of evaluating the electrical performances of the films were compared with the data of their XRD study. According to the XRD data, among all the deposited ZnO films, the maximum crystallinity was found in the co-doped thin film with doping levels of 2 at.% for each impurity metal, deposited at a substrate temperature of 300 °C. It was revealed that the observed increase in the Hall mobility and carrier concentration for the co-doped films may, in particular, be due to the difference in the preferred localization of Ga and Al impurities in the ZnO film: the Ga ions were mainly incorporated into the crystal lattice of ZnO nanocrystallites, while the Al impurity was mostly localized in the intercrystalline space at the grain boundaries.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films

Асваров

Abduev²,

Akhmedov

et al. 2022

Materials

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“…This finding has been reported by other authors, even when the Al,Ca-doped ZnO composites were prepared by different synthesis methods [ 12 ]. As an explanation of this, we may focus attention on the large difference in the atomic radius between zinc (1.42 Å) and calcium (1.94 Å), leading to lattice structure distortion, which consequently limits the growth of the wurtzite grains [ 16 ].…”

Section: Resultsmentioning

confidence: 99%

Development of a Conductometric Sensor Based on Al,Ca-Doped ZnO for the Detection of Formaldehyde

Crispi

Neri

2022

Sensors

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In the present study, the development of a conductometric gas sensor based on Al,Ca-doped zinc oxide composite which is finalized to the detection of formaldehyde (HCHO) at a low concentration in air is investigated. The electrical and sensing properties of the composite based on ZnO doped with different loadings of Al and/or Ca (from 0 up to 5 at%) were evaluated. The gas-sensing mechanism of Al,Ca-doped zinc oxide nanocomposite-based sensors was also discussed. The optimized 3%Al,3%Ca-ZnO sensor displayed a formaldehyde response of 3.5 (@ 4 ppm HCHO/air) and an experimental low detection limit of 125 ppb HCHO/air, at the operating temperature of 400 °C. The sensor was also shown to be selective to HCHO with respect to many interferent indoor gases, but NO2 changed the baseline resistance in an opposite way compared to the target gas. The developed device for monitoring HCHO in indoor and workplace environments has the advantage of a simple planar structure and can be easily fabricated for mass production by using low-cost materials and easy fabrication methods.

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“…The advantages and disadvantages of these deposition techniques are highlighted as shown in Table 1. The prepared thin films could be used in lasers, cathodic ray tubes, solar cells [6], infrared windows, ultraviolet light-emitting diodes, sensors [7], supercapacitors, and biologic and optoelectronic applications [8].…”

Section: Introductionmentioning

confidence: 99%

Recent Advances in the Growth and Characterizations of SILAR-Deposited Thin Films

Soonmin

2022

Applied Sciences

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Many researchers have reported on the preparation and characterization of thin films. The prepared thin films could be used in lasers, cathodic ray tubes, solar cells, infrared windows, ultraviolet light emitting diodes, sensors, supercapacitors, biologic applications, and optoelectronic applications. The properties of these thin films strongly depend on the deposition techniques. Throughout the years, many investigations into the production of various types of thin films (by using the successive ionic layer adsorption and reaction (SILAR) method) were conducted. This method attracts interest as it possesses many advantages when compared to other deposition methods. For example, large area depositions could be carried out in any substrates at lower temperatures via inexpensive instruments; moreover, a vacuum chamber is not required, it has an excellent growth rate, and the unique film properties could be controlled. In this work, metal sulfide, metal selenide, metal oxide, and metal telluride were deposited on substrates by using the SILAR method. According to the findings, both thick and thin films could be synthesized under specific conditions during the experiment. Additionally, the results showed that the number of deposition cycles, rinsing times, immersion times, and concentrations of the precursors affected the crystallinities, grain sizes, film thicknesses, surface roughness, and shapes of the obtained films. These films could be used in solar cell applications with high power conversion efficiency due to the appropriate band gap value and high absorption coefficient value.

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Ca-Doped ZnO:Al Thin Films: Synthesis and Characterization

Cited by 5 publications

References 32 publications

On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films

On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films

Development of a Conductometric Sensor Based on Al,Ca-Doped ZnO for the Detection of Formaldehyde

Recent Advances in the Growth and Characterizations of SILAR-Deposited Thin Films

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