Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide heterostructures built via facing target direct-current sputtering

Chaleawpong, Rawiwan; Promros, Nathaporn; Charoenyuenyao, Peerasil; Borwornpornmetee, Nattakorn; Sittisart, Pattarapol; Sittimart, Phongsaphak; Tanaka, Yūki; Yoshitake, Tsuyoshi

doi:10.1016/j.tsf.2020.138229

Cited by 14 publications

(5 citation statements)

References 60 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Orientation peaks of (111) and (211) of FeSi also appear at 34.76° and 49.99° [ 24 ]. At 800 °C, the XRD patterns resemble those typical of β -FeSi 2 , comprising Si(111) and β (202)/(220) at 29.22° as well as β (404)/(440) at 61.70° [ [25] , [26] , [27] ]. It has been reported that the β phase of FeSi 2 can be achieved through the application of RTA on FeSi due to a drastic mismatch in the diffusion coefficient between Fe and Si [ [28] , [29] , [30] ].…”

Section: Resultsmentioning

confidence: 91%

Wetting state and mechanical property alteration for the Fe3Si films using rapid thermal annealing under various temperatures

Borwornpornmetee,

Traiprom,

Kusaba

et al. 2023

Heliyon

Self Cite

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 91%

Wetting state and mechanical property alteration for the Fe3Si films using rapid thermal annealing under various temperatures

Borwornpornmetee,

Traiprom,

Kusaba

et al. 2023

Heliyon

Self Cite

View full text Add to dashboard Cite

“…Furthermore, these interface states may have acted as sources of leakage currents and as traps for carriers generated by illumination. However, these values are sufficient for applications in photodetector/diode devices, and the affordability and simplicity of manufacturing organic materials enable their practical utilization in commercial applications …”

Section: Resultsmentioning

confidence: 99%

“…Meanwhile, other parameters to study the photovoltaic performance of the constructed heterostructures, the open-circuit voltage ( V oc ), short-circuit current ( I sc ), and fill factor (FF) were evaluated by using the illuminated I – V curve. The FF was calculated using the following equation FF = V max I max V oc I sc …”

Section: Resultsmentioning

confidence: 99%

“…However, these values are sufficient for applications in photodetector/diode devices, and the afford-ability and simplicity of manufacturing organic materials enable their practical utilization in commercial applications. 47 The I−V characteristics of the structures under forward bias at moderate voltage levels (V ≥ 3kT/q) can be analyzed by employing the thermionic emission (TE) theory. According to this theory, the equation is as follows 48,49…”

Section: Resultsmentioning

confidence: 99%

“…However, these values are sufficient for applications in photodetector/diode devices, and the affordability and simplicity of manufacturing organic materials enable their practical utilization in commercial applications. 47 …”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Electrical and Photodetector Characteristics of Schottky Structures Interlaid with P(EHA) and P(EHA-co-AA) Functional Polymers by the iCVD Method

Demirezen,

Ulusoy,

Durmuş

et al. 2023

ACS Omega

View full text Add to dashboard Cite

In this study, poly(2-ethylhexyl acrylate) (PEHA) homopolymer and its copolymer combined with acrylic acid P(EHA- co -AA) were employed as interfaces in two separate Schottky structures. First, both interfaces were grown by initiated chemical vapor deposition (iCVD), which provides much better deposition control and homogeneous coating compared to solution-phase methods. In addition to this advantageous method, the effects of two different polymers, one of which is better able to adhere to the crystal surface on which it is formed than the other, on the optoelectronic properties have been studied. Then, their current–voltage ( I – V ) and capacitance/conductance–voltage ( C /( G /ω)– V ) characteristics were investigated both in the dark and under illumination. The basic electrical parameters and the illumination-induced profile of the surface state ( N ss ) were probed by I – V and C – V measurements for two samples. A decrease in the barrier height (BH) and, consequently, a significant increase in the photocurrent were observed under illumination. Striking changes in series resistance ( R s ) values are also highlighted. The photocapacitance and conductance characteristics indicated that the structures could be considered not only as photodiodes but also as photocapacitors. Moreover, the voltage-dependent changes of some photodetector parameters, such as responsivity ( R ), sensitivity ( S ), and specific detectivity ( D *), along with the transient photocurrent characteristics, are discussed for both structures. Therefore, we can say that the strong changes in these parameters, which figure the merit of photodiode and photodetector applications, depending on the voltage and under illumination, prove that it is a study carried out in accordance with the purpose and so they can be used in electronic and optoelectronic applications.

show abstract

The electronic and optoelectronic properties of Al/hydroxymethyl functionalized Zn(II)Pc/p-Si photonic device

et al. 2023

View full text Add to dashboard Cite

Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide heterostructures built via facing target direct-current sputtering

Cited by 14 publications

References 60 publications

Wetting state and mechanical property alteration for the Fe3Si films using rapid thermal annealing under various temperatures

Wetting state and mechanical property alteration for the Fe3Si films using rapid thermal annealing under various temperatures

Electrical and Photodetector Characteristics of Schottky Structures Interlaid with P(EHA) and P(EHA-co-AA) Functional Polymers by the iCVD Method

The electronic and optoelectronic properties of Al/hydroxymethyl functionalized Zn(II)Pc/p-Si photonic device

Contact Info

Product

Resources

About