Abstract:We reported on photovoltaic and photoconductivity effects as the underlying mechanism in thin-film phototransistors based on 2,2′,6,6′-Tetraphenyl-4,4′-spirobi[cyclopenta[2,1-b;3,4-b′]dithiophene]. The responsivity and the ratio of photocurrent to dark current were 25 A/W and 290, respectively. Our devices also exhibited a field-effect mobility of (1−2)×10−4 cm2∕V s and an ON/OFF ratio of ∼103. Hysteresis in the transfer curve was observed after the curves were measured from the ON-state to the OFF-state and v… Show more
“…We include it here for comparison as it has been used to successfully fit the results for other phototransistors. 11,31 As it can also fit the results here, it does suggest some physical basis for a logarithmic relationship between photocurrent and light intensity in organic phototransistors.…”
We report on solution processed, highly light sensitive thin film transistors (TFTs) based on poly(9,9-dioctylfluorene-co-bithiophene) (F8T2). Transistors without heat treatment showed the highest saturation mobility, while devices annealed at 280°C showed the highest drain current. The latter annealed transistors were found to give highly stable and reproducible performance over many light cycles. Measurements were carried out using an inorganic light emitting diode (LED) light source with a peak wavelength of 465nm and 19nm bandwidth from 0to400μW∕cm2 light intensity on TFTs with an F8T2 film thickness of 30nm. The TFT OFF current was found to increase both with light intensity and gate bias. The bulk photogenerated carrier density was calculated to change from 5×1011to1×1013cm−3 over the measured light intensity range. The TFT saturation mobility did not change with light intensity, remaining constant at 1.2×10−4cm2∕Vs. The TFT ON current instead increased due to a shift in the turn-on voltage VT. This changed from −27to−20V over the measured light intensity range, initially changing rapidly but then saturating at higher intensity values. Contact resistance RC measurements showed large values in the dark. RC rapidly decreases with increasing light intensity, again saturating at higher values. From these results, we propose a phototransistor model in which illumination varies the device performance by effecting injection. By considering this shift in RC as photoassisted barrier lowering which additionally varies the width of the region depleted of carriers between the injecting interface and the channel, it is possible to explain the observed shift in VT as a change in the fraction of the gate bias dropped across the contact capacitance CC. By operating the phototransistor at a value of Vg=−5V (below VT), it was possible to achieve a highly linear response of the photocurrent with light intensity. Alternatively, by operating at a value of Vg=−40V (above VT), it was possible to maximize the photoresponsivity within the measured range. A photoresponsivity of 18.5A∕W at 5μW∕cm2 light intensity was achieved.
“…We include it here for comparison as it has been used to successfully fit the results for other phototransistors. 11,31 As it can also fit the results here, it does suggest some physical basis for a logarithmic relationship between photocurrent and light intensity in organic phototransistors.…”
We report on solution processed, highly light sensitive thin film transistors (TFTs) based on poly(9,9-dioctylfluorene-co-bithiophene) (F8T2). Transistors without heat treatment showed the highest saturation mobility, while devices annealed at 280°C showed the highest drain current. The latter annealed transistors were found to give highly stable and reproducible performance over many light cycles. Measurements were carried out using an inorganic light emitting diode (LED) light source with a peak wavelength of 465nm and 19nm bandwidth from 0to400μW∕cm2 light intensity on TFTs with an F8T2 film thickness of 30nm. The TFT OFF current was found to increase both with light intensity and gate bias. The bulk photogenerated carrier density was calculated to change from 5×1011to1×1013cm−3 over the measured light intensity range. The TFT saturation mobility did not change with light intensity, remaining constant at 1.2×10−4cm2∕Vs. The TFT ON current instead increased due to a shift in the turn-on voltage VT. This changed from −27to−20V over the measured light intensity range, initially changing rapidly but then saturating at higher intensity values. Contact resistance RC measurements showed large values in the dark. RC rapidly decreases with increasing light intensity, again saturating at higher values. From these results, we propose a phototransistor model in which illumination varies the device performance by effecting injection. By considering this shift in RC as photoassisted barrier lowering which additionally varies the width of the region depleted of carriers between the injecting interface and the channel, it is possible to explain the observed shift in VT as a change in the fraction of the gate bias dropped across the contact capacitance CC. By operating the phototransistor at a value of Vg=−5V (below VT), it was possible to achieve a highly linear response of the photocurrent with light intensity. Alternatively, by operating at a value of Vg=−40V (above VT), it was possible to maximize the photoresponsivity within the measured range. A photoresponsivity of 18.5A∕W at 5μW∕cm2 light intensity was achieved.
“…[12,34] for similar devices, but is lower than the ones achieved in more recent works, with the devices treated or measured under special conditions [11,15]. In general, two different effects are assumed to occur in field effect phototransistors under illumination depending on the applied voltage : The photogating (PG, often called photovoltaic) effect and the photoconductive (PC) effect [35][36]. Hence, the photocurrent is the sum of two contributions:…”
Section: Resultsmentioning
confidence: 99%
“…The photoconductive effect refers to the increase in conductivity, ∆ , due to photogeneration of electron-hole pairs in the channel, and is less dependent on the gate voltage [35,37]. Its contribution to the photocurrent is expressed as…”
We study electrical transport properties in exfoliated molybdenum disulfide (MoS) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect as well as space charge limited conduction can simultaneously occur. We point out that the photoconductivity increases logarithmically with the light intensity and can persist with a decay time longer than 10 s, due to photo-charge trapping at the MoS/SiO interface and in MoS defects. The transfer characteristics present hysteresis that is enhanced by illumination. At low drain bias, the devices feature low contact resistance of [Formula: see text] ON current as high as [Formula: see text] 10 ON-OFF ratio, mobility of ∼1 cm V s and photoresponsivity [Formula: see text].
“…Therefore, the channel conductance which consists of both hole and electron charge carriers, as well as the drain current, is increased in proportional to illumination intensity [43,46]. In order to more explain the photoinduced response, the photovoltaic and photoconductive effects have to be evaluated under illumination [47][48][49][50][51]. A photovoltaic effect can be observed when photoTFTs operates at the on-state where the drain photocurrent (I D,photo on-state) dominated by the photovoltaic effect.…”
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