.36%, and 9.18%, which are enhanced by ≈17.5%, 11.6%, and 11.8%, respectively, compared to that of the reference (undoped) devices. The PCE enhancement of the C 3 N 4 QDs doped BHJ-PSC device is found to be primarily attributed to the increase of short-circuit current ( J sc ), and this is confi rmed by external quantum effi ciency (EQE) measurements. The effects of C 3 N 4 QDs on the surface morphology, optical absorption and photoluminescence (PL) properties of the active layer fi lm as well as the charge transport property of the device are investigated, revealing that the effi ciency enhancement of the BHJ-PSC devices upon C 3 N 4 QDs doping is due to the conjunct effects including the improved interfacial contact between the active layer and the hole transport layer due to the increase of the roughness of the active layer fi lm, the facilitated photoinduced electron transfer from the conducting polymer donor to fullerene acceptor, the improved conductivity of the active layer, and the improved charge (hole and electron) transport.